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Sensing device

a sensing device and sensor technology, applied in the direction of instruments, material impedances, transistors, etc., can solve the problems of high current consumption, high current consumption, and direct influence of the sensing device on the detection limit,

Inactive Publication Date: 2018-05-10
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes a device with a built-in heater to improve its ability to detect and respond to low levels of certain substances. This feature makes the device more sensitive and faster to recover from its initial state. The device also uses less power to achieve this.

Problems solved by technology

Therefore, the temperature characteristic of the sensing device directly affects the detection limit, the reacting time, the recovery time, and the like of the sensing device.
However, the heater providing the effective heating causes a high current consumption and is not suitable in some application.

Method used

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Embodiment Construction

[0028]The drawings illustrate the embodiments of the application and, together with the description, serve to illustrate the principles of the application. The same name or the same reference number given or appeared in different paragraphs or figures along the specification should has the same or equivalent meanings while it is once defined anywhere of the disclosure. The thickness or the shape of an element in the specification can be expanded or narrowed.

[0029]FIGS. 1A˜FIG. 1C show sensing devices 100 in accordance with embodiments of the present disclosure. FIG. 1A shows a top view of the sensing device 100. FIG. 1B shows a bottom view of the sensing device 100. FIG. 1C shows a partial cross-sectional view taken along line A-A′ in FIG. 1A. The sensing device 100 is a field effect transistor (FET) which includes two electrodes 31, 32 (for example, one is source electrode and another is drain electrode), a functionalization layer 9, and a sensing area 4 (not shown in FIG. 1A, unde...

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PUM

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Abstract

A sensing device includes a semiconductor structure, a substrate, a first electrode and a second electrode, and a heater. A sensing area arranged on the top side of the semiconductor structure. The substrate is located under the bottom side of the semiconductor. The first electrode and the second electrode are arranged on the top side of the semiconductor structure. The heater is disposed on the semiconductor structure and separated from the sensing area by a distance less than 100 μm.

Description

RELATED APPLICATION[0001]This application claims the benefit of US Provisional Application Ser. No. 62 / 497,108, filed on Nov. 7, 2016, which is incorporated herein by reference in its entirety.TECHNICAL FIELD[0002]The present disclosure relates to a sensing device and methods of making the same, and in particular to a sensing device having an embedded heater.DESCRIPTION OF THE RELATED ART[0003]The development of a sensing device capable of obtaining precise information within a short reacting time is required for the booming IoT (Internet of Things) market. Particularly, efforts to achieve high precision (low detection limit), low current consumption (good power efficiency), low cost of a sensing device has been continued to implement comfortableness of living spaces, cope with a bad industrial environment, and manage food manufacturing processes, etc.[0004]A method widely used in sensing device for improving the detection limit and shorten the reacting time is bonded an additional ...

Claims

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Application Information

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IPC IPC(8): G01N27/414
CPCG01N27/414H01L29/7786H01L23/345H01L29/1029H01L29/7787H01L31/024H01L31/113H01L31/1136G01N27/4141G01N27/02H01L23/3171H01L29/2003H01L29/205
Inventor KASHYAP, KUNALKAO, KUN-WEITSAI, MENG-LUN
Owner EPISTAR CORP