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Layout design for fanout patterns in self-aligned double patterning process

a pattern and self-aligning technology, applied in the field of material patterned strips, can solve the problems of word line reliability problems, increased circuit density, and limited circuit density

Active Publication Date: 2019-12-19
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a circuit structure and a method for manufacturing the structure that includes a plurality of first conducting lines, a plurality of linking lines, and a plurality of connection structures. The first conducting lines are formed in a first direction and have a first pitch in a second direction. The linking lines are formed in the same direction as the first conducting lines and have a second pitch that is greater than the first pitch. The connection structures have a connection structure pitch in the first direction and include a plurality of segments connected at a first end via a first segment in the second direction and at a second end via a second segment in the second direction. The segments have a transition pitch between them that is greater than the first pitch. The circuit structure also includes a plurality of landing pads connected to the linking lines and a plurality of global word lines connected to the landing pads. The method for manufacturing the circuit structure includes forming a mask over a substrate and executing a self-aligned double patterning process on the substrate using the mask. The mask includes mask lines and mask areas separated by mask area gaps. The mask lines have a mask line width greater than the mask line pitch and less than twice the mask area gap width. The mask segments have a transition pitch between them that is greater than the transition pitch of the mask lines. The circuit structure and the method for manufacturing the structure provide improvements in the layout and manufacturing of the structure.

Problems solved by technology

Increases in circuit density often are limited by the resolution of the available photolithographic equipment.
Due to optical proximity effects, the non-uniformity of the pitches in the fanout pattern and the larger critical dimension bias of the fanout pattern can cause reliability issues with word lines, such as weakened / narrower word lines or shorted adjacent word lines near a fanout pattern.

Method used

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  • Layout design for fanout patterns in self-aligned double patterning process
  • Layout design for fanout patterns in self-aligned double patterning process
  • Layout design for fanout patterns in self-aligned double patterning process

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0046]FIG. 1 shows a mask 100 including a plurality of first mask lines (111-115), a plurality of mask areas (141-143), a plurality of mask linking lines (121-123), and a plurality of transition structures (160-162), in accordance with a The mask can be a photolithographic mask that defines a pattern for fabrication of a circuit structure as described herein. The pattern includes the first mask lines, the mask areas, the mask linking lines, and the transition structures that are opaque to light, and open areas that allow light to shine through. The mask can be used use with a self-aligned double patterning process to manufacture a plurality of first conducting lines, a plurality of linking lines, and a plurality of connection structures as described in connection with FIG. 2.

[0047]A plurality of first mask lines (111-115) extends in a first direction (Y-direction). The first mask lines each have a first side (111a, 112a) and a second side (111b, 112b) opposite the first side. The f...

second embodiment

[0069]FIG. 3 illustrates a mask 300 including a plurality of first mask lines (111-115), a plurality of mask areas (141-143), a plurality of mask linking lines (121-123), and a plurality of transition structures (360-362), in accordance with a Description about like elements shown in FIG. 1 is applicable to like elements shown in FIG. 3 and not repeated here. The like elements include a plurality of first mask lines (111-115), a plurality of mask areas (141-143), a plurality of mask linking lines (121-123), and a plurality of pitches (131P-135P) of mask segments in a plurality of mask segments in a transition structure in the second direction (X-direction). A difference between the masks shown in FIGS. 1 and 3 is the arrangements of the mask segments in a transition structure.

[0070]A plurality of transition structures (e.g. 360, 361, 362) is disposed between respective pairs of mask linking lines (e.g. 121, 122). The transition structures each include a plurality of mask segments (...

third embodiment

[0092]FIG. 9 illustrates a mask including a plurality of first mask lines (111-115), a plurality of mask areas (141-143), a plurality of mask linking lines (121-123), and a plurality of transition structures (960-962), in accordance with a Description about like elements shown in FIG. 1 is applicable to like elements shown in FIG. 9 and not repeated here. The like elements include a plurality of first mask lines (111-115), a plurality of mask areas (141-143), a plurality of mask linking lines (121-123), and a plurality of pitches (131P-135P) of mask segments in a plurality of mask segments in a transition structure.

[0093]A plurality of transition structures (e.g. 960, 961, 962) is disposed between respective pairs of mask linking lines (e.g. 121, 122, 123). The transition structures each include a plurality of mask segments (931a, 931b, 932a, 932b, 933a, 933b, 934, 935) extending in the first direction (Y-direction). Mask segments in the plurality of mask segments have a transition...

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Abstract

A circuit structure comprises a plurality of first conducting lines extending in a first direction, the first conducting lines having a first pitch in a second direction orthogonal to the first direction; a plurality of linking lines extending in the second direction, the linking lines having a second pitch in the first direction, the second pitch being greater than the first pitch; and a plurality of connection structures connecting respective first conducting lines for current flow to respective linking lines, the connection structures each including a plurality of segments extending in the first direction, segments in the plurality of segments having a transition pitch in the second direction relative to adjacent segments in the plurality of segments greater than or equal to the first pitch, and less than the second pitch.

Description

BACKGROUNDField of the Technology[0001]The technology disclosed relates to patterned strips of material on integrated circuits and their fabrication, including the use of self-aligned multiple patterning methods to fabricate integrated circuits.Description of Related Art[0002]Integrated circuits are commonly used to make a wide variety of electronic devices, such as memory chips. There is a strong desire to reduce the size of integrated circuits, so as to increase the density of the individual components and consequently enhance the functionality of an integrated circuit. The minimum pitch on an integrated circuit (the minimum distance between the same points of two adjacent structures of the same type, e.g., two adjacent word lines) is often used as a representative measure of the circuit's density.[0003]Increases in circuit density often are limited by the resolution of the available photolithographic equipment. The minimum size of features and spaces that a given piece of photoli...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/033H01L23/522H01L23/528H01L21/768
CPCH01L21/0338H01L21/76877H01L23/528H01L21/0337H01L27/105H01L21/76816H01L21/0335H01L23/5226H10B99/22G03F1/00G03F7/70283G03F7/70466G11C5/025G11C8/10G11C8/14H01L27/0611H01L21/0274H01L21/28132G11C5/063
Inventor YANG, CHIN-CHENGHUANG, CHI-HAOWANG, WEI-HUNG
Owner MACRONIX INT CO LTD