Fabrication of lateral superjunction devices using selective epitaxy

a technology of epitaxy and lateral superjunction, which is applied in the direction of diodes, semiconductor devices, electrical apparatus, etc., can solve the problems of low on-resistance and low-defectivity of current devices, and achieve high on-resistance and low-defectivity. , to achieve the effect of high thickness and composition

Pending Publication Date: 2021-12-02
TEXAS A&M UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach results in power electronics devices with higher breakdown voltages and lower on-resistances, improving both device performance and manufacturing efficiency while reducing costs by using inexpensive substrates.

Problems solved by technology

Work has been done on superjunctions but, to date, no one has provided low-defect (e.g., below 106 cm−2) lateral superjunction GaN devices grown on a relatively inexpensive (silicon or sapphire) substrate.
Current devices are unable to achieve high breakdown voltages at low on-resistances.

Method used

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  • Fabrication of lateral superjunction devices using selective epitaxy
  • Fabrication of lateral superjunction devices using selective epitaxy
  • Fabrication of lateral superjunction devices using selective epitaxy

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Embodiment Construction

[0044]Embodiment(s) of the disclosure will now be described more fully with reference to the accompanying Drawings. The disclosure may, however, be embodied in many different forms and should not be construed as limited to the embodiment(s) set forth herein. The disclosure should only be considered limited by the claims as they now exist and the equivalents thereof.

[0045]Disclosed is a process for forming a lateral superjunction device on a silicon or sapphire substrate having doped GaN layers with favorable defect density (i.e., close to zero) due to use of a selective epitaxy technique. The lateral superjunction of the present disclosure is directed to the problem of manufacturing low-defect power electronics with high breakdown voltages and low on-resistance from GaN deposited on inexpensive (silicon or sapphire) substrates. Use of the described process decreases defects with a concomitant enhancement of device performance. In particular, devices manufactured with the disclosed p...

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Abstract

A lateral superjunction includes a substrate layer, a selective epitaxy layer deposited on the substrate layer, a trench formed into the selective epitaxy layer to expose a portion of the substrate layer, a first layer of semiconductor deposited in the trench, a second layer of semiconductor deposited adjacent to the first layer, and a first end layer of semiconductor deposited adjacent to the first layer of semiconductor and a second end layer of semiconductor deposited adjacent to the second layer of semiconductor.

Description

CROSS-REFERENCES TO RELATED APPLICATIONS[0001]This application is a continuation of U.S. patent application Ser. No. 16 / 642,283, filed on Feb. 26, 2020. U.S. patent application Ser. No. 16 / 642,283 is a national stage entry of PCT / US2018 / 053572, filed on Sep. 28, 2018, which claims priority to U.S. Provisional Patent Application No. 62 / 566,290, filed on Sep. 29, 2017. All of the aforementioned applications are hereby incorporated by reference in their entirety.BACKGROUNDTechnical Field[0002]The present disclosure relates generally to the manufacture of improved (i.e., increased reliability and decreased cost) power electronics devices capable of handling high voltage with low on resistances. For example, and not by way of limitation, the present disclosure relates to fabrication of lateral superjunctions using selective epitaxy.HISTORY OF RELATED ART[0003]Work has been done on superjunctions but, to date, no one has provided low-defect (e.g., below 106 cm−2) lateral superjunction GaN...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L29/06H01L21/02H01L21/285H01L21/306H01L21/308H01L29/20H01L29/45H01L29/66H01L29/861
CPCH01L29/0634H01L21/02381H01L21/0242H01L21/0254H01L21/02645H01L29/861H01L21/30612H01L21/308H01L29/2003H01L29/452H01L29/66204H01L21/28575H01L29/0619H01L29/0657H01L29/0692
InventorBABB, MICHAEL EVERETTHARRIS, HARLAN RUSTY
OwnerTEXAS A&M UNIVERSITY