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Semiconductor device and semiconductor device manufacturing method

Active Publication Date: 2022-04-14
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present disclosure aims to provide a resin-sealed-type semiconductor device that is smaller and less expensive while also preventing cracks from occurring in the semiconductor element. The invention achieves this by configuring the cross-sectional shape of the boundary area between the third joining member and the mold resin in a way that the angle formed by the surface of the semiconductor element and the joining surface between the third joining member and the semiconductor element is not smaller than 90°, and not larger than 135°. This helps to reduce the maximum stress at the maximum stress generation portion of the semiconductor element without complicating or upsizing the structure of the second lead frame which is the main terminal, resulting in a smaller and less expensive semiconductor device while preventing crack formation.

Problems solved by technology

Increase in the thermal deformation force may lead to occurrence of a crack in the semiconductor element.
However, since the thickness of the electrode of the main terminal joined to the semiconductor element is made partially small, a problem arises in that the structure of the main terminal is complicated, and it is difficult to downsize, and reduce cost for, the semiconductor device.
In addition, in the case where two or more semiconductor elements are mounted inside a resin-sealed-type semiconductor device, a problem arises in that the structure of the electrode of the main terminal is more complicated and upsized, and it is more difficult to downsize, and reduce cost for, the semiconductor device.

Method used

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  • Semiconductor device and semiconductor device manufacturing method
  • Semiconductor device and semiconductor device manufacturing method
  • Semiconductor device and semiconductor device manufacturing method

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first embodiment

[0019]FIG. 1 is a plan view schematically showing a semiconductor device 100 according to a first embodiment. FIG. 2 is a major-part cross-sectional view of the semiconductor device 100 taken at the cross-sectional position A-A in FIG. 1. FIG. 3 is a diagram in which values of maximum stress generated at a maximum stress generation portion 12 of a semiconductor element 2 are shown with respect to joining angle 5. FIG. 4 is a diagram showing a manufacturing process for the semiconductor device 100. FIG. 5 is a major-part cross-sectional view schematically showing another semiconductor device 100 according to the first embodiment. FIG. 1 is a view in which a mold resin 9 is excluded, and the alternate long and two short dashes line indicates the contour of the mold resin 9. FIG. 2 and FIG. 5 are views in which the mold resin 9 is also included. Since the semiconductor device 100 is configured to be right-left symmetric about the cross-sectional position A-A in FIG. 1, FIG. 2 shows onl...

second embodiment

[0053]A method for manufacturing the semiconductor device 100 according to a second embodiment will be described. FIG. 8 is a diagram showing a manufacturing process for the semiconductor device 100. In the method for manufacturing the semiconductor device 100 according to the second embodiment, the first step (S11), the second step (S12), and the third step (S13) are performed in a single step (S10).

[0054]Each under-chip joining member which is the first joining member, each lead joining member which is the second joining member, and each over-chip joining member 4 which is the third joining member, are joining members formed of the same type of, or the same, material. The joining members formed of the same type of, or the same, material are joining members formed of, for example, a solder. The use of the joining members formed of the same type of, or the same, material makes it possible to, without separately performing the first step (S11) which is a die bonding step and the seco...

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Abstract

The semiconductor device includes: a heat spreader; a semiconductor element joined to the heat spreader via a first joining member; a first lead frame joined to the heat spreader via a second joining member; a second lead frame joined to the semiconductor element via a third joining member; and a mold resin. In a cross-sectional shape obtained by cutting at a plane perpendicular to a one-side surface of the heat spreader, an angle on the third joining member side out of two angles formed by a one-side surface of the semiconductor element and a straight line connecting an end point of a joining surface between the third joining member and the semiconductor element and an end point of a joining surface between the third joining member and the second lead frame, is not smaller than 90° and not larger than 135°.

Description

BACKGROUND OF THE INVENTION1. Field of the Invention[0001]The present disclosure relates to a semiconductor device and a semiconductor device manufacturing method.2. Description of the Background Art[0002]Increase in the capacities of semiconductor devices mounted with semiconductor elements for power has been progressing in recent years. In order to cause large current to flow to a semiconductor element, it is necessary to upsize a lead frame serving as a main terminal joined to the semiconductor element via a joining member. The upsizing of the lead frame leads to increase in thermal deformation force that is generated to the semiconductor element owing to the difference in linear expansion coefficient among the semiconductor element, the lead frame, and the joining member. Increase in the thermal deformation force may lead to occurrence of a crack in the semiconductor element. In order to reduce the thermal deformation force, many structures in which a semiconductor element, a le...

Claims

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Application Information

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IPC IPC(8): H01L23/495H01L23/31H01L23/00H01L21/56
CPCH01L23/49537H01L23/3114H01L24/33H01L2924/3511H01L21/565H01L2224/33181H01L2224/8321H01L24/83H01L23/492H01L23/49562H01L25/072H01L23/562H01L23/3107H01L2224/40137H01L2924/181H01L24/40H01L24/84H01L2224/84801H01L24/32H01L2224/32058H01L2924/3512H01L2224/32245H01L2224/83447H01L2224/29339H01L2224/29139H01L2224/37147H01L2224/291H01L2224/29147H01L2224/29111H01L2224/29144H01L2224/40499H01L2924/00012H01L2924/0132H01L2924/01029H01L2924/00014H01L2924/014H01L2924/0105H01L2924/013H01L2924/01032
Inventor ISHII, RYUICHI
Owner MITSUBISHI ELECTRIC CORP