Method of manufacturing semiconductor device
a manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, electrical appliances, transistors, etc., can solve the problems of increasing the device, reducing the drive current, and not being able to neglect the problem
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first embodiment
(First Embodiment)
(First Step)
[0049]A gate insulating film is formed on a semiconductor substrate having first and second element regions. On the entire surface of this gate insulating film, a mask having an etching selective ratio to the gate insulating film is formed. After that, this mask is selectively etched to form an opening for exposing that portion of the gate insulating film, which is positioned in the first element region.
[0050]The first and second element regions are isolated by, e.g., a shallow trench type element isolation region formed in the semiconductor substrate.
[0051]The gate insulating film is made of, e.g., a silicate or high-dielectric-constant insulating material. Especially when the gate insulating film is formed by a high-dielectric-constant insulating material, the film thickness can be increased, so a highly reliable semiconductor device can be manufactured by suppressing or preventing a gate leakage current. Examples of this high-dielectric-constant insu...
second embodiment
(Second Embodiment)
(First Step)
[0060]A plurality of gate trenches are formed in an interlayer insulating film on a semiconductor substrate having first and second element regions such that those portions of the surface of the semiconductor substrate in which the element regions are positioned are exposed in the bottoms of these trenches. Subsequently, a gate insulting film is formed on the entire surface including the gate trenches. On the entire surface of this gate insulating film, a mask having an etching selectivity to the gate insulating film is formed. After that, this mask is selectively etched to form an opening for exposing the gate insulating film in the gate trench positioned in the first element region.
[0061]The first and second element regions are isolated by, e.g., a shallow trench type element isolation region formed in the semiconductor substrate.
[0062]A silicon oxide film, for example, can be used as the interlayer insulating film.
[0063]The same materials as explain...
third embodiment
(Third Embodiment)
(First Step)
[0073]A plurality of gate trenches are formed in an interlayer insulating film on a semiconductor substrate having first and second element regions such that those portions of the surface of the semiconductor substrate in which the element regions are positioned are exposed in the bottoms of these trenches. Subsequently, a gate insulting film is formed on the entire surface including the gate trenches. On the gate insulating film in each gate trench, a mask having an etching selective ratio to the gate insulating film is selectively formed. That is, the mask is buried in each gate trench.
[0074]The first and second element regions are isolated by, e.g., a thin trench type element isolation region formed in the semiconductor substrate.
[0075]A silicon oxide film, for example, can be used as the interlayer insulating film.
[0076]The same materials as explained in the first embodiment can be used as the gate insulating film and mask.
[0077]The selective format...
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Abstract
Description
Claims
Application Information
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