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Magnetic memory

a magnetic memory and memory technology, applied in the field of magnetic memory, can solve the problems of difficult achievement of higher integration and error in writing, and achieve the effects of large resistance change rate, high resistance change rate, and limited achievement of higher integration of magnetic memory

Active Publication Date: 2008-04-29
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This configuration prevents erroneous writing and allows for the miniaturization of magnetoresistive effect elements, facilitating higher integration and stable data reading and writing with reduced power consumption.

Problems solved by technology

In this configuration, the magnetic field of the electric current from the write line is also radiated into directions except for the direction toward the magnetoresistive effect element as an object to be written, and it can cause erroneous writing in other magnetoresistive effect elements.
For this reason, achievement of higher integration is difficult with the MRAM in the configuration to vary the direction of magnetization in the magnetosensitive layer by the magnetic field of the electric current.

Method used

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Examples

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modification examples

[0069](Modification Examples)

[0070]Modification examples of the magnetic memory 1 according to the present embodiment will be described below. FIGS. 10, 11, and 12 are sectional views showing configurations of TMR elements 4a-4c according to the respective modification examples. When the magnetic memory is provided with the TMR elements 4a-4c of the modification examples, instead of the TMR elements 4 of the above embodiment, it can enjoy the effects similar to those of the magnetic memory 1 of the above embodiment.

[0071]First, referring to FIGS. 10 and 11, the TMR elements 4a and 4b are comprised of a first magnetic layer 41, a nonmagnetic insulating layer 42, a second magnetic layer 43, a first nonmagnetic conductive layer 44, and a third magnetic layer 45. The TMR elements 4a and 4b of these modification examples are different from the TMR element 4 of the above embodiment in that the TMR elements do not have the antiferromagnetic layer 46 and in that the second magnetic layer 43...

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Abstract

A TMR element has a free first magnetic layer, a second magnetic layer with a magnetization direction B fixed, a nonmagnetic insulating layer provided between the first magnetic layer and the second magnetic layer, a third magnetic layer provided above a surface of the first magnetic layer and having a fixed magnetization direction, and a first nonmagnetic conductive layer provided between the first magnetic layer and the third magnetic layer, and an area of a cross section of the first magnetic layer perpendicular to a stack direction is not less than 0.001 μm2, and less than 0.02 μm2.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a magnetic memory for storing data in magnetoresistive effect elements.[0003]2. Related Background Art[0004]An MRAM (Magnetic Random Access Memory) with magnetoresistive effect elements is presently drawing attention as a storage device used in information processing apparatus such as computers and communication equipment. The MRAM is a type of memory that stores data by magnetism, and is thus free of such inconvenience that information is lost with power discontinuity, different from the DRAM (Dynamic Random Access Memory) and SRAM (Static RAM) being volatile memories. In addition, the MRAM is much superior in access speed, reliability, power consumption, etc. to nonvolatile storage means such as the conventional flash EEPROM (Electronically Erasable and Programmable Read Only Memory) and hard disk drives. Therefore, the MRAM holds the potential to replace all the function of the volati...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G11C11/15
CPCG11C11/16H01L27/228H01L43/08H10B61/22H10N50/10
Inventor HOSOBUCHI, TOSHIKAZU
Owner TDK CORPARATION
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