The invention belongs to the technical field of a memory, and discloses a write operation circuit of a resistive random access memory. The write operation circuit comprises a voltage feedback module, a feedback control logic circuit, a slope pulse generating circuit, a polarity selection circuit and a column decoding and column gating circuit, wherein the voltage feedback module is used for acquiring voltage at a drain terminal of a memory array transistor, comparing the voltage with reference voltage and outputting a feedback signal; the feedback control logic circuit is used for receiving a write enable signal and a write operation signal, outputting a control signal under the control of the feedback signal, and driving or ending the write operation of a lower circuit; the slope pulse generating circuit is used for receiving the control signal and generating a pulse signal which changes step by step; the polarity selection circuit is used for receiving the pulse signal and the write operation signal, and outputting an SL signal and a BL-pre signal; the column decoding and column gating circuit is used for receiving the BL-pre signal, decoding, and gating a column gating tube to enable the BL-pre signal to be written into a bit line of a memory array; the SL signal accesses a source line of the memory array. According to the write operation circuit, the self-feedback detection process is realized by detecting the voltage at the drain terminal of the memory array; with the step pulse signal, the phenomenon of over-writing can be avoided, and the reliability of the resistive random access memory is improved.