Write operation circuit of resistive random access memory

Abstract

The invention belongs to the technical field of a memory, and discloses a write operation circuit of a resistive random access memory. The write operation circuit comprises a voltage feedback module, a feedback control logic circuit, a slope pulse generating circuit, a polarity selection circuit and a column decoding and column gating circuit, wherein the voltage feedback module is used for acquiring voltage at a drain terminal of a memory array transistor, comparing the voltage with reference voltage and outputting a feedback signal; the feedback control logic circuit is used for receiving a write enable signal and a write operation signal, outputting a control signal under the control of the feedback signal, and driving or ending the write operation of a lower circuit; the slope pulse generating circuit is used for receiving the control signal and generating a pulse signal which changes step by step; the polarity selection circuit is used for receiving the pulse signal and the write operation signal, and outputting an SL signal and a BL-pre signal; the column decoding and column gating circuit is used for receiving the BL-pre signal, decoding, and gating a column gating tube to enable the BL-pre signal to be written into a bit line of a memory array; the SL signal accesses a source line of the memory array. According to the write operation circuit, the self-feedback detection process is realized by detecting the voltage at the drain terminal of the memory array; with the step pulse signal, the phenomenon of over-writing can be avoided, and the reliability of the resistive random access memory is improved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a write operation circuit of a resistive variable memory. Background technique [0002] As a non-volatile storage technology, RRAM has gradually become a research hotspot and is widely used in the field of storage technology. [0003] The quality of the memory writing process determines the stability of the memory. In the existing memory, some overwriting or miswriting often occurs during the storage process, which seriously affects the storage reliability and stability. [0004] On the other hand, the write operation process consumes a lot of power, and self-feedback control is used to improve the write operation efficiency and reduce power consumption; at the same time, resetfail problems sometimes occur after the reset is completed. Contents of the invention [0005] The technical problem to be solved by the present invention is to provide a method for avoiding the problems ...

AI Technical Summary

Problems solved by technology

[0003] The quality of the memory writing process determines the stability of the memory. In the existing memory, some overwriting or miswriting often occurs during the storage process, which seriously affects the reliability and stability of the memory.

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