Semiconductor device and manufacturing method for the same

Abstract

A semiconductor device and manufacturing method for the same are disclosed. The method includes providing a substrate that has an insulator layer and a semiconductor layer overlying the insulator layer. The method further includes forming a hard mask layer pattern on the semiconductor layer and etching the semiconductor layer using the patterned hard mask layer to form portions having different thickness in the semiconductor layer. The method also includes performing an oxygen-based treatment on the semiconductor layer to form a supporting oxide layer. A portion of the semiconductor layer is buried in the supporting oxide layer.

Description

CROSS-REFERENCES TO RELATED APPLICATIONS[0001]This application claims priority to Chinese Patent Application No. 201110266369.3, filed on Sep. 9, 2011 and entitled “Semiconductor Device and manufacturing method for the same”, which is incorporated herein in its entirety by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]This disclosure relates to semiconductor technology, and more particularly, to a semiconductor device and manufacturing method for the same.[0004]2. Description of the Related Art[0005]As semiconductor processing technology advances, the critical dimension (CD) of a semiconductor device continuously scales down. In such case, requirements for semiconductor manufacturing processes have become more stringent.[0006]Taking a fin field effect transistor (FinFET) as an example, as the CD of the semiconductor device scales down, it is almost impossible to form a desired dimension of the fin, e.g., a width of the fin, by patterning with lithography....

AI Technical Summary

Benefits of technology

[0012]An object of this disclosure is to provide an improved method of manufacturing a semiconductor device, which can satisfy requirements for continuously decreased CD of the semiconductor device. Further, the method can provide a yield improvement.

[0040]Many benefits can be achieved by way of the present invention over conventional techniques. For example, the present invention can prevent or at least reduce collapsing of the fin structure or the unintentional removal of the fin structure, and thus, improve the yield of the semiconductor device.

Problems solved by technology

Taking a fin field effect transistor (FinFET) as an example, as the CD of the semiconductor device scales down, it is almost impossible to form a desired dimension of the fin, e.g., a width of the fin, by patterning with lithography.

However, in the prior art, how to prevent fin collapse / undesired remove during manufacturing becomes an importance problem, when the CD of fin continuously scales down.

As the thickness of the fin structure continuously decreases, the fin structure tends to collapse and / or be undesirably removed during subsequent manufacturing processes.

As a result, the yield of the semiconductor device may be adversely affected.

Likewise, as the thickness of the fin structure continuously decreases, the fin structure tends to collapse and / or be undesirably removed during subsequent manufacturing processes.

As a result, the yield of the semiconductor device may be adversely affected.

Images