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Flow sensor using a heat element and a resistance temperature detector formed of a metal film

a flow sensor and metal film technology, applied in the direction of measuring devices, instruments, and measuring the speed of fluids using thermal variables, can solve the problems of degrading the relative high tcr inherent in the metal film cannot be obtained, and the detection sensitivity of the resistance temperature detector is degraded, so as to achieve high tcr inherent, the detection sensitivity of the resistance temperature detector can be improved, and the effect of high sensitivity

Active Publication Date: 2012-09-18
HITACHI ASTEMO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0007]By forming a resistance temperature detector of a thermal fluid flow sensor by using a metal film having a relatively high temperature coefficient of resistance (hereinafter abbreviated as a TCR), detection sensitivity of the resistance temperature detector can be improved. However, according to the studies by the inventors of the present invention, the TCR of the metal film formed on a semiconductor substrate made of single crystal Si (silicon) via an insulating film is lower than the TCR of the metal film formed directly on a semiconductor substrate made of single crystal Si via no insulating film. Therefore, a relatively high TCR inherent in the metal film cannot be obtained although the metal film is used as a resistance temperature detector of a thermal fluid flow sensor, and the detection sensitivity of the resistance temperature detector is degraded.
[0008]An object of the present invention is to provide a technology capable of achieving a highly-sensitive flow sensor by forming a metal film having a relatively high TCR on a semiconductor substrate via an insulating film.
[0013]Since a Ta film having a relatively high TCR is formed on a semiconductor substrate via an insulating film, it is possible to achieve a highly-sensitive flow sensor.

Problems solved by technology

Therefore, a relatively high TCR inherent in the metal film cannot be obtained although the metal film is used as a resistance temperature detector of a thermal fluid flow sensor, and the detection sensitivity of the resistance temperature detector is degraded.

Method used

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  • Flow sensor using a heat element and a resistance temperature detector formed of a metal film
  • Flow sensor using a heat element and a resistance temperature detector formed of a metal film
  • Flow sensor using a heat element and a resistance temperature detector formed of a metal film

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first embodiment

[0032]An example of a plan view of main parts of a thermal fluid flow sensor according to a first embodiment is shown in FIG. 1.

[0033]A measurement device 1, which is a thermal fluid flow sensor, includes a semiconductor substrate 2 made of single crystal Si, a heat element 3 formed on the semiconductor substrate 2 via an insulating film, a resistance temperature detector 4 composed of an upstream-side resistance temperature detector 4a and a downstream-side resistance temperature detector 4b for detecting a temperature of air heated by the heat element 3, a resistance temperature detector for air 5 for measuring an air temperature, terminal electrodes 6a, 6b, 6c, 6d, 6e, 6f, and 6g for connecting signals from the measurement device 1 to an external circuit, lead wirings 7a and 7b for connecting both ends of the heat element 3 to the terminal electrodes 6a and 6b, lead wirings 7c and 7d for connecting both ends of the resistance temperature detector 4 to the terminal electrodes 6c a...

second embodiment

[0060]In a second embodiment, a Mo (molybdenum) film is used as a metal film which forms a heat element and resistance temperature detectors included in a measurement device which is a thermal fluid flow sensor. FIG. 12 is a cross-sectional view of main parts of one example of the thermal fluid flow sensor according to the second embodiment, which shows the same portions (main parts taken along the line A-A′ in FIG. 1) as those shown in FIG. 6 of the above-described first embodiment.

[0061]An insulating film 31 is formed on a semiconductor substrate 30 made of single crystal Si, and a heat element 32, a resistance temperature detector (upstream-side resistance temperature detector 33a and downstream-side resistance temperature detector 33b), a resistance temperature detector for air 34, and a lead wiring 35 which are all made of a third metal film made of, for example, Mo are formed on the insulating film 31. The insulating film 31 is provided so as to insulate the semiconductor subs...

third embodiment

[0067]In a third embodiment, an example in which a measurement device including a heat element and resistance temperature detectors is applied to an acceleration sensor will be described.

[0068]FIG. 14 is a plan view showing main parts of one example of an acceleration sensor according to the third embodiment.

[0069]An acceleration sensor 41 includes a heat element 42, terminal electrodes 43a and 43b for electrically connecting the heat element 42 and an external circuit, resistance temperature detectors 44a, 44b, 44c, and 44d having the same length (same resistance value) disposed so as to be spaced a predetermined distance apart in four directions from the heat element 42, and terminal electrodes 45a, 45b, 45c, 45d, 45e, and 45f for electrically connecting the resistance temperature detectors 44a, 44b, 44c, and 44d and the external circuit, which are all formed on a semiconductor substrate made of single crystal Si via an insulating film and the like. In the external circuit, a brid...

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Abstract

The present invention provides a technology capable of achieving a highly-sensitive flow sensor, by forming a metal film having a relatively high TCR on a semiconductor substrate via an insulating film. A measurement device which is a thermal fluid flow sensor includes a heat element, resistance temperature detectors (upstream-side resistance temperature detector and downstream-side resistance temperature detector), and a resistance temperature detector for air which are all formed of a first metal film. The first metal film is formed of an α-Ta film having a resistivity lower than three times the resistivity of a Ta ingot and obtained by deposition through sputtering on an amorphous film containing metal.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The present application claims priority from Japanese Patent Application No. JP 2005-259902 filed on Sep. 7, 2005, the content of which is hereby incorporated by reference into this application.TECHNICAL FIELD OF THE INVENTION[0002]The present invention relates to a flow sensor for fluid or gas. More particularly, it relates to a technology effectively applied to a sensor for measuring a fluid or gas flow.BACKGROUND OF THE INVENTION[0003]As an air flowmeter installed in an electronically-controlled fuel injection system of an internal combustion engine of an automobile or the like for measuring intake air flow, a thermal fluid flow sensor has been the mainstream because it can directly detect a mass air volume. In particular, a thermal fluid flow sensor manufactured using a semiconductor micromachining technology has received attention because it can be manufactured at low cost and can be driven by low power.[0004]For example, a thermal mi...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G01F1/68
CPCG01F1/6845G01F1/699G01P5/10
Inventor SAKUMA, NORIYUKIYAMAMOTO, NAOKITAKEDA, KENICHIFUKUDA, HIROSHI
Owner HITACHI ASTEMO LTD
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