The invention discloses a
correlation analysis method for multi-source defect data of a
semiconductor wafer, and relates to the technical field of
wafer defect detection in
semiconductor manufacturing. Aiming at the pain points of non-uniform types of multi-source defect data, difficulty in cross-parameter association, improper
processing of repeated records and single similarity
algorithm in the prior art, the method disclosed by the invention realizes uniform
adaptation of the multi-type defect data, complete retention of repeated data,
differential algorithm configuration, cross-batch parameter
adaptation and deep association of a
time sequence and a process; according to the method, a standardized report containing
process optimization suggestions is generated through template loading, dynamic parameter adaptive calibration, multi-dimensional feature weighted fusion, configurable
spatial similarity algorithm, cross-batch
time sequence correlation analysis, defect-process parameter mapping correlation key technologies, output numerical values, space and comprehensive correlation coefficients; the method is high in compatibility, complete in analysis dimension and high in decision value, can be seamlessly integrated to an existing
wafer quality control system, and provides comprehensive support for optimization of a
semiconductor manufacturing process.