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800 nano waveband quartz transmission-polarizing beam-splitting grating

A technology of polarization beam splitting and grating, applied in the direction of diffraction grating, optics, optical elements, etc.

Inactive Publication Date: 2007-10-03
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But as far as we know, no one has given the design parameters of deep-etched high-density quartz transmission polarization beam-splitting gratings for semiconductor lasers in the 800-nanometer wavelength band or femtosecond pulses with a center wavelength of 800 nanometers

Method used

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  • 800 nano waveband quartz transmission-polarizing beam-splitting grating
  • 800 nano waveband quartz transmission-polarizing beam-splitting grating
  • 800 nano waveband quartz transmission-polarizing beam-splitting grating

Examples

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Embodiment Construction

[0020] Using micro-optical technology to manufacture high-density rectangular polarization beam-splitting gratings, first deposit a layer of metal chromium film on a dry and clean fused silica substrate, and evenly coat a layer of positive photoresist on the chromium film (Shipley, S1818, USA ). Then use the holographic recording method to record the grating (see Figure 6), and use He-Cd laser 7 (wavelength: 0.441 μm) as the recording light source. When recording the holographic grating, the shutter 8 is opened, and the narrow beam emitted from the laser is divided into two narrow beams by the beam splitter 9. After one beam passes through the mirror 10, it passes through the beam expander 14 and the lens 16 to form a wide plane wave; after the other beam passes through the mirror 11, it passes through the beam expander 15 and the lens 17 to form a wide plane wave. After the two beams of plane waves pass through the mirrors 12 and 13 respectively, they form an interference fi...

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Abstract

Being applicable to 800 Nano wave band, the grating possesses following specification: 598-622 Nano cycle, 2.40-2.50 micro etch depth, 1 / 2 duty ratio, extinction ratio larger than 100, reflective diffraction efficiency at 0 order of TE polarized light higher than 95.61%, reflective diffraction efficiency at 1 order of TM polarized light higher than 96.41%. in particular, when grating cycle is as 609 Nano, and etch depth is as 2.45 micro, extinction ratio of the disclosed grating reaches to 1.04*104 , reflective diffraction efficiency at 0 order of TE is 97.23%, and reflective diffraction efficiency at 1 order of TM is 98.25%. The disclosed grating can be produced in quantity and low cost by using technique of recording holographic grating, or electron beam write through device combined with microelectronic deep etch technique.

Description

technical field [0001] The invention relates to a polarization beam-splitting grating device of a semiconductor laser with a wavelength of 800 nanometers or a femtosecond pulse with a center wavelength of 800 nanometers, in particular a quartz transmission polarization beam-splitting grating with a wavelength of 800 nanometers. Background technique [0002] Due to the advantages of small size, light weight, and high energy conversion efficiency, semiconductor lasers have been applied in the entire field of optoelectronics, and have become the core technology of optoelectronic science today. Among them, semiconductor lasers in the 800-nm band are the most commonly used lasers. Femtosecond lasers are characterized by ultra-high speeds and ultra-strong electric fields. Femtosecond laser not only has important applications in the fields of high-energy physics and nuclear physics, but also plays an important role in the fields of communication, medical treatment, environment and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/18G03F7/00G02B27/28
Inventor 周常河王博
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI