Unlock instant, AI-driven research and patent intelligence for your innovation.

Silicon layer structure with transformation particle size and method for forming the same structure by thermal technology

A silicon structure and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems such as gate charge loss

Inactive Publication Date: 2007-12-05
MACRONIX INT CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So, the observed drop in data retention can be attributed to the loss of gate charge due to miss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon layer structure with transformation particle size and method for forming the same structure by thermal technology
  • Silicon layer structure with transformation particle size and method for forming the same structure by thermal technology
  • Silicon layer structure with transformation particle size and method for forming the same structure by thermal technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] A semiconductor device can be manufactured by a method that includes the formation of multilayer devices via vapor deposition on a base structure. Furthermore, the electrical properties of the multilayer components used to form the component microstructure can be altered during deposition by the selective inclusion of other elements or compounds during or after deposition to obtain a result known as "doping".

[0047]FIG. 1 is a schematic cross-sectional view of a silicon device structure 100 incorporating features of the present invention. The structure includes a substrate 104, a multilayer device 102 disposed on the substrate, and at least one additive layer 124 located on the upper surface 112 of the multilayer device. The multi-layer device includes a first layer 106 further including a first surface 108, a second surface 110, a first region 106A adjacent to the first surface and a second region 106B adjacent to the second surface. The multilayer device further in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention is silicon layer structure with converted grain size and the thermal process to form the structure. The structure has polysilicon on one surface and non-crystal silicon on the opposite surface, and the conversion is monotonic and abrupt. If the layer is used as the float grid of some float grid transistor structure, the larger grain size structure is adjacent to tunneling dielectric layer to reduce the formation of point and protrusion to decrease leakage. On the other hand, the smaller grain size structure is adjacent to grid dielectric layer to produce smooth and homogeneous grid dielectric layer. The transistor of polysilicon-non-crystal silicon structure may be prepared via certain temperature distribution, which is favorable to forming polysilicon in the first stage of depositing float grid and favorable to forming non-crystal silicon in the latter stage.

Description

technical field [0001] The present invention relates to the field of semiconductor device manufacturing and the formation of silicon microstructures in devices using chemical vapor deposition, dopant implantation, patterning and etching of patterns, and other manufacturing techniques. Furthermore, polysilicon is a material widely used in electronic components, and the present invention relates to a manufacturing method and component structure that require the use of polysilicon. More specifically, in certain memory devices, polysilicon can be used as floating gates of transistors to form a memory array. In the application of this type of memory device, the floating gate of the transistor is used to store and retain a number of charges according to the written data. A read operation can then be performed on a device to retrieve the stored data when needed. Background technique [0002] In the manufacture of semiconductor elements, the structure of silicon can vary according...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/788H01L29/04H01L21/20H01L21/02
Inventor 黄致远陈咏生
Owner MACRONIX INT CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com