50 results about "Silicon microstructures" patented technology

The invention discloses a high-precision photodynamic accelerometer based on a zipper type photonic crystal micro-nano cavity. The accelerometer comprises a laser input and reception structure arranged in the left and right sides of the accelerometer structure, a silicon micro mechanical structure arranged in the middle portion of the accelerometer, and a glass substrate structure positioned in the bottom of the silicon micro mechanical structure and provided with electrodes. A laser incident structure is arranged in an input groove in the left side of a main silicon microstructure, a reception structure is arranged in an output groove in the right side of the main silicon microstructure. An optical signal serves as a measurement signal of the micro accelerometer, the sensitivity is high,the uncertainty is low, the detection limit of the micro accelerometer is improved, and the detection sensitivity is improved greatly. The zipper type photonic crystal micro-nano cavity is used, the performance is more stable and the optical precision is higher compared with a common planar parallel resonance micro-nano cavity at present, and higher acceleration sensitivity is achieved.

The invention discloses a masking method for deep-etching a multi-layer silicon structure by a dry method. The masking method comprises the following steps of: A, photoetching an Az positive photoresist pattern; B, performing the deep-etching on a silicon structure by taking the obtained Az positive photoresist pattern as a mask; C, cleaning the Az mask and the silicon structure, and coating a first layer of Su8 negative photoresist; D, photoetching the Su8 photoresist to obtain a mask pattern of a lower structure by an alignment mark; and E, deep-etching a lower silicon structure by taking the pattern obtained from the step D as the mask; and repeating the steps to obtain the multi-layer silicon microstructure with greater structure depth. The method has the advantages that: because the Su8 photoresist is selected as the mask for deep reactive ion etching of the inductively coupled plasmas, an effect of protecting an etched structure is achieved and the direct physical bombardment ofions caused by exposing a previous etching structure in the plasmas is effectively avoided; and the method has high process repeatability, can be used in the same component repeatedly and realizes three or more layers of monocrystalline silicon microstructures with a high aspect ratio.