7 results about "Silicon microstructures" patented technology

The present invention discloses a MEMS optical electric field sensor based on luminous flux detection. A silicon microstructure grid layer and a glass chrome-plated grid layer are arranged up and down to form a sensitive structure. The lower silicon microstructure is connected to the underlying silicon structure by a spring, and the upper glass chrome-plated layer is fixed to the silicon microstructure by bonding. The upper structure is fixed and the lower silicon microstructure deforms with changes in the electric field. A light source is incident vertically from directly above and is received after passing through the two-layer structure. The deformation of the lower silicon microstructure causes the overlapping area of ​​the grid and the upper grid to change, thereby realizing a change in the received luminous flux. It can realize the measurement of electric field strength in a strong electromagnetic environment, and the preparation and packaging method is simple, easy to install and use, and low in cost. It can be applied to electric field measurement in multiple scenarios such as power system status monitoring and space electric field detection.

The application discloses a MEMS optical resonant accelerometer, and belongs to the field of micro-nano mechanical and electrical systems and optical sensing. The accelerometer comprises a glass base, a silicon microstructure layer, a safety structure group, a two-quadrant photodetector and a light source. The two-quadrant photodetector is arranged at the center of the glass base. The silicon microstructure layer is provided with a force-receiving base and a mass block connected through four groups of vertical force amplification units. The force-receiving base is provided with a folding beam type safety structure at four corners. The mass block is provided with a circular light transmission hole at the center and is coaxially aligned with the two-quadrant photodetector. Electrostatic comb drive groups are symmetrically arranged on both sides of the mass block to excite resonance. The light source emits a vertical light beam which is received by the two-quadrant photodetector through the light transmission hole. When acceleration acts on the force-receiving base, the inertial force is converted into axial stress of the mass block through a lever mechanism to modulate the resonant frequency. When the phase of the light intensity signal lags behind the driving signal by 90 degrees, the system is locked in the resonant state, and the acceleration is calculated through frequency offset to realize high-precision measurement of acceleration.

The invention discloses an MEMS optical resonant accelerometer, and belongs to the field of micro-nano electromechanical systems and optical sensing. The accelerometer comprises a glass base, a silicon microstructure layer, a safety structure group, a double-quadrant photoelectric detector and a light source, a double-quadrant photoelectric detector is arranged in the center of the glass base; the silicon microstructure layer is provided with a stress base and a mass block which are connected through four groups of vertical force amplification units; folding beam type safety structures are arranged at four corners of the stress base; the center of the mass block is provided with a circular light hole which is coaxially aligned with the double-quadrant photoelectric detector, and electrostatic comb tooth driver groups are symmetrically arranged on two sides of the mass block to excite resonance; the light source emits a vertical light beam which is received by the double-quadrant photoelectric detector through the light hole; when acceleration acts on the stress base, inertia force is amplified and converted into axial stress of the mass block through the lever mechanism, and the resonant frequency of the mass block is modulated. When the phase of the light intensity signal lags behind the driving signal by 90 degrees, the system locks the resonance state, the acceleration is calculated through frequency deviation, and high-precision measurement of the acceleration is achieved.

The invention provides a high-reliability electric signal vertical lead-out method of a vacuum sealing MEMS chip, which comprises the following steps: S1, carrying out metal layer or dielectric layer deposition, photoetching and etching on the bottom surface of a vertical lead layer of the MEMS chip to form a bonding pattern layer; wherein the vertical lead layer is a TGV layer or a TSV layer; s2, performing alignment eutectic bonding sealing packaging on the silicon wafer containing the silicon microstructure and the bonding pattern layer; wherein a sealing support sheet is arranged at the bottom of the silicon wafer; and S3, depositing a metal film layer on the top surface of the bonded vertical lead layer, and forming an electrode bonding pad through photoetching and wet etching, so that the electrode bonding pad is conducted with a silicon lead of the silicon wafer. A graphical bonding sealing process is combined with the TSV or the TGV containing the metallized filler with good conductivity, so that the air tightness process requirements of the metallized filled TGV and the TSV are favorably relaxed, and a process scheme which gives consideration to the high vacuum sealing performance of the MEMS chip and the high-reliability vertical extraction of an electric signal is provided.

The present disclosure relates to a method for at least one of forming a part or modifying a part, and a system therefor. The method involves initially providing a planar structure having a first material layer disposed on a second material layer. A lithographic operation including greyscale printing is performed to produce a resist material layer on the first material layer, with the resist material layer having a predetermined three-dimensional pattern extending along X, Y and Z axes, with features helping to define the three-dimensional pattern having differing dimensions along the Z axis, and which acts as a mask. An etch process is then performed, using the mask provided by the resist material layer, to etch the first material layer to impart the pattern of the mask as an etched pattern into the first material layer in accordance with a predetermined selectivity etching ratio, such that the etched pattern in the first material layer includes features formed with greater dimensions than corresponding features in the mask of the resist material layer.

The invention belongs to the technical field of micro-nano manufacturing, and particularly relates to a grating-like microstructure and a preparation method thereof. According to the method provided by the invention, the isotropic undercutting effect of low-temperature inhibition thermochemistry, low-energy ion directional bombardment implementation atomic-like layer-by-layer stripping and denser and more stable in-situ plasma passive film inhibition side wall etching are integrated, and dynamic balance is achieved through linkage of control parameters in a reaction chamber; meanwhile, by means of faster reaction between high-concentration fluorine free radicals and silicon at the bottom of the groove at low temperature, high-aspect-ratio silicon microstructure etching can be achieved in the one-time etching process, the etching depth exceeds 1 micrometer, the etching morphology with excellent side wall perpendicularity and surface roughness reaching the sub-nanometer magnitude can be achieved, and the method is suitable for large-scale production. Therefore, the shape fidelity of the high-aspect-ratio nanostructure is ensured, the strict requirement of a high-end device on an atomic-scale flat interface is met, and the subsequent structure quality and the device performance are remarkably improved.

The present invention discloses a fiber-optic silicon-based microstructure underwater acoustic sensor, which is a non-intrinsic F-P air microcavity probe in which the optical fiber end face and the silicon-based thin film form optical signal interference. The silicon-based thin film is sensitive to sound pressure signals to pick up the sound pressure changes in the liquid sound field environment and convert them into changes in the light signal interference phase. The sound pressure signal in the liquid sound field is restored through a detection and demodulation algorithm. The microcavity probe is encapsulated with an organic material thin shell structure to improve the hydrostatic pressure resistance of the underwater acoustic sensor to adapt to applications in deep water environments. The fiber-optic silicon-based microstructure underwater acoustic sensor includes an acoustic sensing silicon microstructure, a microstructure sensing probe, and a sensor pressure-resistant structure. The acoustic characteristics of the acoustic sensing silicon microstructure are designed using materials such as silicon oxide / silicon nitride as sensing materials, and the external stress recovery of the diaphragm is achieved through residual internal stress. The present invention has easy design and process, flexible application, and strong environmental adaptability, and can be used for noise monitoring and target detection in various complex scenarios.