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Nitride stacked crystal layer structure and its producing method

A technology of nitride epitaxial layer and manufacturing method, which is applied to laser components, semiconductor lasers, electrical components, etc., and can solve problems such as high density, deterioration of component characteristics, and excessive difference in lattice constants

Active Publication Date: 2007-12-26
FORMOSA EPITAXY INCORPORATION +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the large difference between the lattice constant of GaN and the lattice constant of the substrate, the GaN defect density formed by using this low-temperature buffer layer is as high as 10 10 / cm 3 above
The light-emitting diode buffer layer structure made of such gallium nitride material will make the ESD withstand voltage of the element too low, resulting in a shortened life span and deterioration of the element characteristics.

Method used

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  • Nitride stacked crystal layer structure and its producing method
  • Nitride stacked crystal layer structure and its producing method

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Embodiment Construction

[0020] The preferred embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. The ratio of certain dimensions relative to other parts is exaggerated to provide a clearer description and to help those skilled in the art to understand the present invention.

[0021] FIG. 1 shows a preferred embodiment of the nitride epitaxial layer structure of the present invention, and FIG. 2 shows a flowchart of specific implementation steps of the nitride epitaxial layer structure of FIG. 1 .

[0022] Referring to FIG. 1, it is a nitride epitaxial layer structure composed of a first interposer 102, a second interposer 103 and a nitride epitaxial layer 104 formed by stacking sequentially on a substrate 101. The first interposer Layer 102 and second interposer layer 103 are materials used to improve subsequent attachment. Wherein, as shown in FIG. 2 , the steps include: step 201, forming high-temperature aluminum indium galliu...

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Abstract

This invention relates to a crystal-lamination layer structure of a nitride and its processing method. The structure includes a base plate as the backing, a first medium layer formed on the backing by laminating suitable thickness of high temperature Al1-x-yGaxInyN, a second medium layer formed on the first medium layer by laminating suitable thickness of re-crystallized Al1-x-yGaxInyN and a nitride crystal-lamination layer formed on the second medium layer by laminating nitride crystal-lamination layer.

Description

technical field [0001] The present invention relates to a nitride epitaxial layer structure and its manufacturing method, in particular to provide a special intermidium layer structure and its manufacturing method. Background technique [0002] The traditional gallium nitride (GaN) is a light-emitting diode buffer layer structure. A buffer layer (buffer layer) is formed on a substrate, and a gallium nitride-based nitride epitaxial layer is formed on the buffer layer. Among them, Generally, this type of buffer layer is made of a low-temperature (200-900°C) Al x Ga 1-x N or low temperature In x Ga 1-x N material is deposited, and then high-temperature gallium nitride is formed to form its nitride epitaxial layer. However, due to the large difference between the lattice constant of GaN and the lattice constant of the substrate, the GaN defect density formed by using this low-temperature buffer layer is as high as 10 10 / cm 3 above. The light-emitting diode buffer layer s...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01S5/00H01L33/04H01L33/32
Inventor 温子稷涂如钦游正璋武良文简奉任
Owner FORMOSA EPITAXY INCORPORATION