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Cage-shaped multipolymer porous superlow dielectric silicon oxide film and method for preparing same

An ultra-low dielectric and polymer technology, which is applied in the field of ultra-low dielectric silicon oxide films made of cage-type polymers and its preparation, can solve the problems of difficulty in controlling the pore size of the film, the decrease of the mechanical properties of the film, and the adhesion of silicon wafers. Poor performance and other problems, to achieve the effect of size reduction, stable electrical properties, and good adhesion

Inactive Publication Date: 2008-04-09
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the low dielectric constant insulating dielectric films that have been researched more at home and abroad include fluorine-containing silicon oxide film (SiOF), polyimide film (PI), silicon sesquioxide film (SSQ), etc., but these products have production Disadvantages such as complex process, poor temperature resistance, corrosion to circuits, and poor adhesion to silicon wafers
The nanoporous silicon oxide film in the prior art is mostly organic matter, which decomposes during pore formation and cannot participate in crosslinking, resulting in difficulty in controlling the pore size of the film, uneven distribution of micropores, and severe mechanical properties of the film during annealing. decline

Method used

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  • Cage-shaped multipolymer porous superlow dielectric silicon oxide film and method for preparing same

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Embodiment 1

[0025] Embodiment 1: the prepared low dielectric constant insulating dielectric silicon oxide film of the present invention is made of cage octapolyhydrogensilsesquioxane (Si 8 o 12 h 8 ) with allylsilsesquioxane and phenyltriethoxysilane:

[0026] The chemical bonds in the film are Si-O bonds, Si-C bonds and C-H bonds; the film contains nano-micropores with a diameter of 5 nanometers, and the volume ratio of the micropores to the film is 20%; the thickness of the film is 350 nanometers.

[0027] The preparation method of above-mentioned film is:

[0028] 1. Hydrosilylation of cage octahydrogen silsesquioxane and allyl silsesquioxane under the catalysis of chloroplatinic acid to obtain octapropyl silsesquioxane terminal cage octasilsesquioxane oxane, as a porogenic template.

[0029] 2. Using the above-mentioned porogenic template and phenyltriethoxysilane as raw materials, wherein dimethyl dimethide is hydrolyzed in tetrahydrofuran under the catalysis of dilute acid to ob...

Embodiment 2

[0030] Embodiment 2: the prepared low dielectric constant insulating dielectric silicon oxide film of the present invention is made of tetramethylammonium octahydroxide cage octapolysilsesquioxane (Si 8 o 8 (ON(CH 3 ) 4 ) 8 ) and methyltrimethoxysilane as materials, the chemical bonds in the film are Si-O bonds, Si-C bonds and C-H bonds; the film contains nano-micropores with a pore diameter of 2 nanometers, and the volume ratio of the micropores to the film is 30%; the thickness of the film is 200 nm.

[0031] The preparation method of the film is as follows: octahydroxide tetramethylammonium cage octapolysilsesquioxane and methyltrimethoxysilane are used as raw materials. Wherein the ratio of tetramethylammonium octahydroxide cage octapolysilsesquioxane and methyltrimethoxysilane is 1: 1, sol is made under weak base catalysis in ethanol, makes 0.5% concentration sol, in The film was spin-coated at 4000 rpm, annealed at 400°C under argon gas, and the heating rate was 10°...

Embodiment 3

[0032] Embodiment 3: The low dielectric constant insulating dielectric silicon oxide film prepared by the present invention is made of octachloropropyl cage octapolysilsesquioxane, dimethyldimethoxysilane and ethyl orthosilicate , the chemical bonds in the film are Si-O bonds, Si-C bonds and C-H bonds; the film contains nano-micropores with a pore diameter of 4 nanometers, and the volume ratio of the micropores to the film is 50%; the thickness of the film is 400 nanometers.

[0033] The preparation method of above-mentioned film is:

[0034] 1. The ratio of octachloropropyl cage-type octasilsesquioxane to dimethyldimethoxysilane is 1:8, and the eight chloropropyl groups are silanized to form a pore-making template through a Grignard reaction.

[0035] 2. The ratio of the above-mentioned porogenic template and ethyl orthosilicate raw material to methyl orthosilicate is 1:4, and hydrolyzed under acid catalysis in dimethylformamide to obtain a sol with a concentration of 0.3%, a...

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Abstract

The present invention discloses one kind of cage-like pore creating superlow dielectric constant silica film and its preparation process. The film consists of cage-like polymer in 1-80 wt% and polysiloxane in 20-99 wt%. The preparation process includes the following steps: preparing sol in organic solvent with cage-like polymer as pore creating template and siloxane; coating the sol on silicon chip to form film; and annealing the film under the protection of inert gas. The cage-like polymer as pore creating template has low dielectric constant, no decomposing in annealing and nanometer micropore structure and may have several kinds of active radicals in the tops, so that the cage-like polymer may be connected with the crosslinking system in several points to raise the electromagnetic performance of the material.

Description

1. Technical field [0001] The invention relates to a cage-type polymer hole-making ultra-low dielectric silicon oxide film and a preparation method thereof. The film is used in the manufacture of integrated circuits. 2. Background technology [0002] With the rapid development of large-scale integrated circuits, when the feature size of integrated circuits is reduced to 180nm or less, interconnection parasitic resistance, delay caused by capacitance, crosstalk and energy consumption have become the development of high-speed, high-density, low-power consumption And the bottleneck problem that the multifunctional integrated circuit needs to solve. In large-scale integrated circuits, interlayer and interline dielectrics are replaced by low dielectric constant insulating dielectric films, which can effectively reduce interconnect parasitic capacitance, thereby reducing delay, crosstalk and energy consumption caused by capacitance. Therefore, many researchers have been exploring...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J5/18C08J3/24C08L83/04
Inventor 贾叙东袭鍇何辉余学海
Owner NANJING UNIV