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Integrate circuit and method for operating the same

An integrated circuit, operating voltage technology for programming, reading, and erasing these types of memories

Inactive Publication Date: 2008-04-23
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Despite the success of this non-volatile memory, the technology still needs to be improved

Method used

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  • Integrate circuit and method for operating the same
  • Integrate circuit and method for operating the same
  • Integrate circuit and method for operating the same

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Embodiment Construction

[0018] Integrated circuits providing nonvolatile storage include nonvolatile erasable programmable memory cells. Many integrated circuits with nonvolatile memory cells include memories, microcontrollers, microprocessors, and programmable logic. Nonvolatile memory integrated circuits can be combined with other nonvolatile memory integrated circuits to form larger memories. Nonvolatile memory integrated circuits can also be combined with other integrated circuits or components such as controllers, microprocessors, random access memory (RAM), or I / O elements to form nonvolatile memory systems. An example of a flash EEPROM system is discussed in US Pat. No. 5,602,987, the disclosure of which is incorporated herein by reference in its entirety. Additional discussions of non-volatile elements and storage in US Patent Nos. 5,095,344, 5,270,979, 5,380,672, 6,222,762, and 6,230,233 are also incorporated herein by reference.

[0019] Some types of non-volatile storage or memory cells ...

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Abstract

A technique to perform an operation (e.g., erase, program, or read) on memory cells (105) is to apply an operating voltage dynamically to the gates (111, 113) of the memory cells, rather than a continuous operating voltage. This reduces the power consumed during the operation. Dynamic operation or background operation such as background erase also permits other operations, such as read, program, or erase, to occur while the selected memory cells are operated on. This improves the operational speed of an integrated circuit using dynamic operation compared to a continuous operation. In an embodiment for background erase, the erase gates are charged to the erase voltage using a charge pump (204, 208). The pump is then turned off (212), and the erase gates remain at the erase voltage dynamically (216). The erase voltage at the erase gates will be periodically checked and refreshed as needed until the memory cells are fully erased (224). While the charge pump is off and the erase voltage is dynamically held at the erase dates, other operations, possibly on other memory cells, may be performed (220).

Description

technical field [0001] The present invention relates to a non-volatile erasable programmable memory, in particular to a method for erasing, programming and reading these types of memory. Background technique [0002] Memory and storage is a key technological content that promotes the development of the information age. With the rapid development of Internet, World Wide Web (WWW), cordless telephone, personal digital assistant, digital camera, digital video camera, digital music player, computer, network and other technologies, better memory and storage technology are constantly needed. A special type of memory is non-volatile memory. Non-volatile memory retains its memory and stored state even when power is lost. Some types of non-volatile erasable programmable memory include flash memory, EEPROM, EPROM, MRAM, FRAM, ferroelectric and magnetic memory. Some non-volatile storage products include compact flash (CF) cards, multimedia cards (MMC), flash PC cards (eg, ATA flash ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/16G11C8/08G11C16/06G11C11/56G11C16/02G11C16/04G11C16/12G11C16/30
CPCG11C2216/18G11C11/5628G11C16/30G11C16/12G11C8/08G11C16/0483G11C16/04
Inventor 瑟尼·若尔·安德里安
Owner SANDISK TECH LLC