Light-emitting component with circuit protection device

Abstract

The invention relates to an illuminating unit with circuit preserver which comprises a circuit preserver including a resistance layer and a buffer layer, wherein there is a barrier potency between the low resistance layer and the buffer layer; the circuit preserver is connected with the illuminating unit; when it generates static electricity or oversize advanced over current to hurt the illuminating unit, the circuit preserver generates a rectification function.

Description

technical field [0001] The present invention relates to a light-emitting element, in particular to a light-emitting element of a circuit protection device Background technique [0002] Light emitting devices are widely used, for example, in optical display devices, laser diodes, traffic signs, data storage devices, communication devices, lighting devices, and medical devices. In this technique, one of the most important tasks for technicians at present is how to avoid damage to the light-emitting element caused by static electricity, so as to improve the yield of the light-emitting element. [0003] Such as figure 1 As shown, in order to avoid damage to the light-emitting element due to static electricity, a circuit protection element such as a Zener Diode is connected in reverse parallel when the light-emitting element is packaged, so that the electrostatic discharge caused by the environment can pass through the light-emitting element. The Zener diode is derived to avoid...

AI Technical Summary

Problems solved by technology

However, this invention is to bond the die after cutting with the shunt diode (soldering), so the electrostatic damage in the process of the LED die cannot be avoided. In addition, the process increases the step of bonding the die and the shunt diode. Relatively higher cost

[0005] In U.S. Patent No. 6023076, a nitride light-emitting diode is disclosed. The first electrode in the light-emitting diode is connected to the first semiconductor layer and the second semiconductor layer, and a Schottke is generated between the first electrode and the second semiconductor layer. Base contact (Schottky contact), when a reverse current is generated, the current flows from the first electrode through the second semiconductor layer to the second electrode without flowing through the inside of the light-emitting diode to avoid damage. However, the protection of this reverse current The method still uses the second semiconductor layer as a channel, so when the reverse current is too large, it is still possible to directly penetrate the inside of the light-emitting diode and cause damage to the light-emitting diode itself

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