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Method for preparing detector in ultraviolet light

A detector and ultraviolet light technology, which is applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem of not having the excellent performance of natural single crystal diamond, which is not conducive to surface photolithography electrodes and signal extraction, and diamond film Surface flatness is not high, to achieve the effect of reducing carrier recombination, improving charge collection efficiency, and less grain boundaries

Inactive Publication Date: 2008-08-06
SHANGHAI UNIV
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Problems solved by technology

Moreover, due to the inconsistency of orientation, the existence of a large number of defects such as grain boundaries hinders the transport of charges, so it cannot have the excellent properties of natural single crystal diamond
For example, the thermal conductivity of natural single crystal diamond is as high as (20W / cm·K), while the polycrystalline diamond film with any orientation has a low thermal conductivity even if its purity is high, which makes the performance of polycrystalline thin film detectors not as good as those based on single crystal materials. the detector
In addition, the surface flatness of randomly oriented diamond film is not high, which is not conducive to surface photolithography electrodes and signal extraction

Method used

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  • Method for preparing detector in ultraviolet light
  • Method for preparing detector in ultraviolet light

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Embodiment 1

[0020] Example 1, see figure 1 , 2 , the specific process steps of the present embodiment are as follows:

[0021] (1) Substrate pretreatment: use an area of ​​1×1cm 2 A (100) silicon wafer was used as a substrate, and was ultrasonically cleaned with HF acid for 10 minutes to remove the silicon oxide layer on the surface. Use diamond powder with a particle size of 100nm to perform mechanical grinding for 5 minutes to produce uniform scratches on the entire silicon substrate surface. At the same time, many diamond particles have been embedded on the silicon substrate. These scratches and diamond particles are formed during the nucleation period. Become the original nucleation center, greatly increasing the nucleation density of diamond. The ground silicon wafers were ultrasonically cleaned with deionized water and acetone for 10 minutes respectively to remove impurities and organic matter on the surface, dried and placed in a hot wire deposition reaction chamber.

[0022] (...

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Abstract

The method for preparing ultraviolet light detector in high performance belongs to technical for fabricating parts in inorganic non-metal material. Traditional chemical vapor deposition of hot wire is adopted in the method. Thin film of diamond is deposited on crystal face (100) in silicon chip substrate. Gold electrode in certain thickness is coated by vaporization on the thin film of diamond. Then, through photoetching technology forms comb type electrode in forked finger shape with both of width of finger and gap as 25 micros. Lead out wire is prepared from magnalium filament so as to produce ultraviolet light detector. Performance indexes are: dark current less than 1nA / cm2, and response time near to 10-10 second, and other all-round performance better than other ultraviolet light detector.

Description

technical field [0001] The invention relates to a manufacturing method using (100) oriented diamond film grown on a silicon wafer as an ultraviolet light detector, and belongs to the field of manufacturing technology of inorganic non-metallic material devices. Background technique [0002] In the 1950s, people began to study ultraviolet detection technology. Ultraviolet detection technology is another dual-use photoelectric detection technology developed after infrared and laser detection technology. As far as military high technology is concerned, the military has attached great importance to ultraviolet countermeasures and anti-resistance technologies, ultraviolet guidance, ultraviolet communication, ultraviolet / infrared composite guidance and early warning systems, etc. Countries all over the world have listed solid-state ultraviolet detector technology as a key topic of current research and development. At present, due to the mature technology of silicon (Si) materials...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 王林军夏义本马莹苏青峰刘健敏
Owner SHANGHAI UNIV
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