ICP coil capable of adjusting local coupling strength

Abstract

This invention relates to coils of an inductance coupled plasma device, in which, this invented ICP coil capable of adjusting local couple strength includes a coil matrix and several screw coils are serial on the matrix, which can adjust the couple strength of the coil and the plasma to let the plasma be distributed uniformly so as to change the local etching speed.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to an inductively coupled plasma device (ICP) coil. Background technique [0002] At present, with the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires enterprises that produce integrated circuits to continuously improve the processing capacity of semiconductor wafers. Among them, the inductively coupled plasma device (ICP) is widely used in the wafer etching process for manufacturing integrated circuits (IC) and MEMS devices. Its working principle is: in a low-pressure environment, under the excitation of radio frequency power, the reactive gas generates ionization to form plasma, which contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active reactions Various physical and chemical reactions occur on the surf...

AI Technical Summary

Problems solved by technology

The deficiency of this prior art is: 1, although this technology has increased the adjustable margin of plasma density in the center of chamber and surrounding to a certain extent, needs to use two sets of power supplies and matcher (or the matcher of two-way output ), greatly increasing the cost of the whole set of equipment

2. For non-centrosymmetric etching unevenness, it cannot be eliminated, see image 3

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