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Method of making a semiconductor device

A semiconductor and device technology, applied in the field of manufacturing semiconductor devices, can solve problems such as enhancing the uniformity of critical regions

Active Publication Date: 2008-10-29
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is not helpful for controlling etch deviation or enhancing the uniformity of critical regions

Method used

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  • Method of making a semiconductor device
  • Method of making a semiconductor device
  • Method of making a semiconductor device

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Embodiment Construction

[0018] Preferred embodiments according to the present invention will now be described in detail with reference to the accompanying drawings so that those skilled in the art can easily practice the present invention.

[0019] In the drawings, the illustrated thicknesses are made larger in order to clearly represent the various layers and regions. Throughout the specification, the same reference numerals refer to the same parts.

[0020] Figure 4 is a plan view illustrating a manufacturing method for a semiconductor device according to an embodiment of the present invention when a dummy pattern is used. As shown in the figure, in the process of forming the gate (main) pattern 1 in the low-density pattern region, a plurality of dummy patterns 5 are formed at a predetermined distance from the side of the gate pattern 1, that is, formed in the same position as the gate pattern 1. The active region 2 adjacent to the gate pattern 1 is formed on the non-active region 6 .

[0021] ...

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Abstract

Disclosed is a method of making a semiconductor device in which a main pattern is formed through a photolithography process over a low-density pattern area having a relatively small number of patterns to be formed in certain areas as compared to the other areas. According to the method at least one or more dummy patterns are formed over inactive areas, adjacent to active areas, where the main pattern is formed, and are spaced a predetermined distance from the sides of the main pattern. This method can improve the process margin and improve the uniformity of critical regions of patterns to thus improve the yield of a semiconductor device by making a low-density pattern area with the same pattern density as high-density or intermediate-density pattern areas by forming dummy patterns, which do not affect the semiconductor device, on the sides of a main pattern of the low-density pattern area according to a design rule.

Description

technical field [0001] The present invention relates to methods of manufacturing semiconductor devices. More particularly, the present invention relates to a method of manufacturing a semiconductor device by arranging a dummy pattern at a lower density portion among relatively different density portions of a pattern to be formed in a photolithography process , can simplify the control of etching bias (etch bias) and improve the process margin (process margin) of the pattern. The dummy pattern has the same size as the pattern to be formed, and is not on the active area, but on the adjacent non-active area. over the source area. Background technique [0002] Generally, a process of manufacturing a semiconductor device includes a step of manufacturing a desired shape pattern by depositing a specific thin film and selectively etching a portion of the thin film by means of a photolithography process. In this step, the aforementioned pattern may have a high-density pattern area ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/027G03F1/00G03F1/70H01L21/3065H01L21/3205H01L21/768H01L21/822H01L23/522H01L27/04
CPCG03F1/144H01L21/32139G03F1/36H01L21/0338
Inventor 崔在升
Owner SK HYNIX INC