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Power semiconductor device and method therefor

A technology of semiconductors and semiconductor tubes, applied in the field of silicon semiconductor devices, can solve problems such as device design limitations

Active Publication Date: 2008-12-17
ESTIVATION PROPERTIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Dominant devices for such high-power RF applications have severe device design limitations when attempting to further extend frequency, operating voltage, and reduce distortion

Method used

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  • Power semiconductor device and method therefor
  • Power semiconductor device and method therefor
  • Power semiconductor device and method therefor

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Embodiment Construction

[0038] The following detailed description is exemplary in nature and is not intended to limit the invention or the application of the invention. Furthermore, the invention is not to be bound by any expressed or implied theory presented in the technical field, background, brief summary or the following detailed description.

[0039] Die

[0040] Turning now to the drawings, where like reference numerals are used to designate corresponding elements throughout the several views, turning first to Figure 1, there is shown a radio frequency (RF) power transistor integrated circuit (IC) device or die ( Top view of die)90. Therefore, device dies and packages according to the present invention are expected to have higher breakdown voltage, improved linearity, better thermal management, lower R dson , higher output impedance, lower output capacitance and extended frequency response. In the RF power transistor embodiment described, die 90 is made of a p-type silicon semiconductor die ...

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Abstract

A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnect region covering the first main surface, a control electrode coupled to a control electrode interconnect region covering the first main surface, and a control electrode coupled to a control electrode interconnect region covering the second main surface. The second electrode of the surface interconnects the second electrode of the region. Each transistor cell has a substantially constant doping concentration within the channel region. The dielectric mesa is employed as an edge termination of the epitaxial layer, thereby maintaining substantially planar equipotential lines therein. The described power transistors have unique application in radio frequency applications operating at frequencies above 500 MHz and consuming more than 5 watts. The semiconductor die and package are designed such that the power transistor can operate efficiently under such severe conditions.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to Patent Cooperation Treaty (PCT) International Application No. PCT / US2005 / 000205 with an international filing date of January 6, 2005, which claims U.S. Provisional Application No. 60, filed January 10, 2004 / 535956 and priority of US Provisional Application No. 60 / 535955, filed January 10, 2004. All of the above applications are hereby incorporated by reference. technical field [0003] The present invention relates generally to silicon semiconductor devices, and more particularly to radio frequency (RF) power transistors. Background technique [0004] The present invention relates generally to radio frequency (RF) power transistors, and more particularly to radio frequency (RF) power transistors operating at frequencies greater than 500 megahertz and dissipating power greater than 5 watts. However, it should be understood that certain aspects of the present invention have applicab...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/423H01L29/78H01L21/762H01L23/492H01L23/047H01L23/367H01L23/051H01L21/336
CPCH01L2924/0002H01L2924/13091H01L2924/30107H01L2924/00
Inventor 罗伯特·B·戴维斯沃伦·L·西利珍妮·S·帕维奥
Owner ESTIVATION PROPERTIES