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Dry device and dry method for semiconductor equipment

A drying method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve problems such as difficult drying, moisture residue, long time, etc.

Inactive Publication Date: 2008-12-31
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] For some vacuum hoses connected to semiconductor equipment, in order to save space, the vacuum hoses are mostly designed to be bent. If the method disclosed by Kevin Lee is used, the steps are cumbersome, and it is necessary to wipe and then pass in the gas to remove pollutants and water vapor. Purpose, need to spend too much manpower and time
If the current general technology is used to directly blow the vacuum hose with a vacuum pump or nitrogen, there will still be moisture remaining in the pipeline, making it difficult to dry, and it will take too long to reach the pressure (or vacuum) required by the reaction chamber.
In addition, during the maintenance of general semiconductor equipment, there will also be the problem of drying semiconductor parts, because a large amount of chemical solutions and water will be used when cleaning semiconductor parts, so it is very important to dry semiconductor parts after cleaning. technology that will make semiconductor equipment repairs take too long

Method used

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  • Dry device and dry method for semiconductor equipment
  • Dry device and dry method for semiconductor equipment
  • Dry device and dry method for semiconductor equipment

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Embodiment Construction

[0020] figure 1 is a schematic diagram of a drying device 10 according to an embodiment of the present invention. The drying device 10 of the present invention is used in a semiconductor device, especially in a chemical vapor deposition device, for drying the semiconductor device and removing by-products produced by reactions in the semiconductor device.

[0021] Such as figure 1 As shown, the drying device 10 includes a pipeline 150 with a vacuum hose 110 , a control device 120 , a relay 130 , a vacuum valve 140 and an extraction device 160 , wherein the pipeline 150 is connected between the extraction device 160 and the reaction chamber 200 . The reaction chamber 200 is connected with the pipeline 150 through the switching valve 170 . The clamp 190 is used to tightly connect the vacuum hose 110 to the pipeline 150 . According to an embodiment of the present invention, the extraction device 160 can be a vacuum pump (VACUUM PUMP). When the extraction device 160 is activated...

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Abstract

A drying method for semiconductor equipment. The drying device includes an extraction device, a pipeline, a fluid switch, a current switch and a control device. The extraction equipment and the pipeline are respectively connected to the semiconductor equipment, and a fluid switch is arranged on the pipeline. The control device electrically controls the fluid switch through the current switch. When the fluid switch is turned on, a fluid flows out of the semiconductor device through the pipeline through the extraction device. By switching the fluid switch several times between on and off, the drying operation of semiconductor equipment or parts can be completed in a short time, and the expected pressure in the reaction chamber can be reached in a short time.

Description

【Technical field】 [0001] The invention relates to a drying method for semiconductor equipment, especially for chemical vapor deposition equipment. 【Background technique】 [0002] Chemical Vapor Deposition (CVD) is a film deposition technology that utilizes chemical reactions to generate solid products from reactants (usually fluids) in a chamber and deposit them on the surface of a wafer. After decades of development, chemical vapor deposition has become the most important and dominant thin film deposition method in the semiconductor manufacturing process, unlike physical vapor deposition, which is mostly limited to the deposition of metal thin films, whether it is a conductor, a semiconductor or Electrical materials can be deposited by chemical vapor deposition. [0003] When chemical vapor deposition is performed in a reaction chamber, deposits, such as conductors, semiconductors or dielectric materials, are deposited not only on the surface of the wafer, but also on the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00C23C16/56
Inventor 曾国邦郝鸿虎
Owner MACRONIX INT CO LTD