Capacitor with nona-composite dielectric medium structure and method for manufacturing the same

Abstract

It provides a capacitor of nanocomposite dielectric structure and manufacturing method. This capacitor include: down-electrode, nanocomposite dielectric structure and up-electrode. The nanocomposite dielectric structure is achieved by mixing the layer of hafnium oxide (HfO2) and dielectric which dielectric constant is equal to or greater than layer's dielectric constant of HfO2. The dielectric layer include materials of ZrO2, La2O3 and Ta2O5,and each layer has a dielectric constant about 25 to about 30 and a band-gap energy level about 4.3 to 7.8.

Description

technical field [0001] The present invention relates to semiconductor devices and methods of manufacturing the same; and more particularly, to capacitors having nanocomposite dielectric structures and methods of manufacturing the same. Background technique [0002] Since the large-scale integration of memory products has been accelerated by miniaturization in semiconductor technology, the size of unit cells has rapidly shrunk and low operating voltages can be realized. However, despite the reduced cell size, the capacity required to operate a memory device should be greater than 25pF per cell to prevent soft error events and reduce refresh times. Therefore, even though a three-dimensional storage node having a hemispherical electrode surface with a large surface area has been realized, for using silicon nitride (Si 3 N 4 ) layer of dynamic random access memory (DRAM) NO capacitor height has continued to increase. The silicon nitride layer is typically formed using dichlor...

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Problems solved by technology

As a result, it may be difficult to guarantee the expected high-k dielectric constant HfAlO nanocomposite dielectric layer in sub-80nm devices

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