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Forming method for thin film coated layer

A thin-film covering and masking layer technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of raised defects in deposited films, improve raised defects, increase production, and ensure cleanliness degree of effect

Active Publication Date: 2009-04-29
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The invention provides a method for forming a film covering layer. Before depositing a film, a processing step of ashing and removing the residue after etching is added, which can improve the existing problem of protruding defects after depositing a film.

Method used

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  • Forming method for thin film coated layer
  • Forming method for thin film coated layer
  • Forming method for thin film coated layer

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Embodiment Construction

[0025] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0026] In the silicon wafer manufacturing process, it is often necessary to deposit a thin film layer to fill the trench after the silicon wafer is etched to form a trench. However, it is found in practice that large-area protrusions often appear on the film deposited after etching the trench, forming particle defects, resulting in degradation or damage of device performance. Experimental analysis shows that this is because after etching the trench, some residues will remain on the surface of the silicon wafer. Although most of the residue will be removed in the subsequent wet cleaning step, it is difficult to clean the bottom of the trench. In some places, some residual particles are still easy to remain, and it is these residual part...

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Abstract

The present invention discloses a method for forming a thin film cover; the method is to cover a mask layer on a substrate material layer and to make patterns on the mask layer; the mask layer is used to etch the material layer in which grooves are formed; to carry out the wet cleaning for the etched material layer; to remove residues in the groove after wet cleaning; to deposit the thin film cover on the material layer. The method using the present invention is capable of forming a high-quality deposit thin film, thereby increasing the production output as well as the rate of finished product.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a thin film covering layer. Background technique [0002] The so-called thin film refers to a thin solid substance grown on a substrate; thin film deposition refers to any process of depositing a film on a substrate. There are two types of film deposition methods: chemical vapor deposition (CVD, Chemical Vapor Deposition) and physical vapor deposition (PVD, Physical Vapor Deposition). Among them, chemical vapor deposition is a process in which chemical substances containing atoms or molecules required for a thin film are mixed in a reaction chamber and react in a gaseous state, and the atoms or molecules are deposited on the surface of the wafer and gathered to form a thin film. Generally, it can be divided into several categories such as atmospheric pressure CVD (APCVD), subatmospheric pressure CVD (SACVD), low pressure CVD (LPCVD), plas...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/316
Inventor 张子莹刘松妍徐根保
Owner SEMICON MFG INT (SHANGHAI) CORP