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Photoelectric changer

A conversion device, optoelectronic technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as low open circuit voltage

Inactive Publication Date: 2009-04-29
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the photoelectric conversion device using the above-mentioned conventional microcrystalline silicon (μc-Si) as the photoelectric conversion layer (power generation unit) has the problem of low open circuit voltage, which is an important output parameter of the photoelectric conversion device.

Method used

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Embodiment Construction

[0031] Embodiments of the present invention will be described below with reference to the accompanying drawings.

[0032] first embodiment

[0033] Refer below figure 1 The general structure of the photoelectric conversion device of the first embodiment will be described.

[0034] First, if figure 1 As shown, in the photoelectric conversion device of the first embodiment, the metal electrode layer 2 composed of Ag having a film thickness of about 300 nm is formed on the upper surface of the glass substrate 1 . On the upper surface of the metal electrode layer 2, a transparent electrode 3 composed of AZO (aluminum, zinc oxide) having a film thickness of about 100 nm is formed. Here, the transparent electrode 3 is an example of the "electrode layer" of the present invention. In addition, on the upper surface of the transparent electrode 3, an n-layer 4 (film thickness of about 50 nm) composed of phosphorous-doped microcrystalline silicon (μc-Si) and an n-layer 4 (thickness...

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Abstract

A photoelectric conversion device capable of improving an open-circuit voltage is obtained. In this photoelectric conversion device, many of crystal grains(5a,15a) contained in a third non-single-crystalline semiconductor layer(5,15) have major axes substantially perpendicular to a main surface (1a,11a) of a substrate (1,11) on an interfacial portion between at least either a first non-single-crystalline semiconductor layer or a second non-single-crystalline semiconductor layer and the third non-single-crystalline semiconductor layer, and many of crystal grains(4a,19a) contained in either semiconductor layer have major axes substantially parallel to the main surface of the substrate on the aforementioned interfacial portion.

Description

technical field [0001] The present invention relates to a photoelectric conversion device, and in particular to a photoelectric conversion device using a non-single crystal semiconductor containing a large number of crystal grains such as microcrystals and polycrystals as a photoelectric conversion layer. Background technique [0002] In recent years, Japanese Patent Application Laid-Open No. 2001-284619 and Japanese Patent Laid-Open No. 2002-76396 have proposed photoelectric conversion devices using microcrystalline silicon (μc-Si) semiconductors as photoelectric conversion layers. Here, the so-called microcrystalline silicon (μc-Si) semiconductor includes a large number of crystal grains with a maximum particle size of about 100 nm or less, and contains Si as a constituent element and has an amorphous phase inside. A photoelectric conversion device using such microcrystalline silicon (μc-Si) as a photoelectric conversion layer is characterized in that photodegradation is p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/04H01L27/00H01L31/00H01L31/0352H01L31/0368H01L31/06H01L31/075H01L31/077
CPCH01L31/075Y02E10/546Y02E10/548H01L31/03682Y02E10/547
Inventor 岛正树平茂治
Owner SANYO ELECTRIC CO LTD