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Graphite washing unit

A technology for cleaning devices and graphite, which is applied in the direction of gaseous chemical plating, coating, electrical components, etc., and can solve the problems of reducing equipment use efficiency, incomplete cleaning, and failure to reach

Inactive Publication Date: 2009-05-27
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this method has the following disadvantages: (1) When the machine is occupied, the use efficiency of the equipment is reduced; (2) The cleaning is not thorough, the baking is not clean, and sometimes the purpose cannot be achieved

Method used

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Comparison scheme
Effect test

no. 1 example

[0040] see figure 1 as shown, figure 1 It is the first embodiment of the present invention, a kind of graphite cleaning device of the present invention, it is characterized in that, comprises:

[0041] A shell 8, the shell 8 is a hollow cuboid structure, and the shell 8 is made of stainless steel or quartz material;

[0042] A graphite base support 10, the graphite base support 10 is located at the bottom of the shell 8;

[0043] A graphite heater 9, the graphite heater 9 is a box structure, and the graphite heater 9 is positioned above the graphite base support 10;

[0044] A thermal insulation material 12, the thermal insulation material 12 surrounds the periphery of the graphite heater 9;

[0045] An upper cover 7, the upper cover 7 is located above the shell 8;

[0046] An induction coil 4, the induction coil 4 is helically wound on the periphery of the casing 8, and the heating working temperature range of the induction coil 4 is 400°C-1300°C. ;

[0047] Three-way g...

no. 2 example

[0051] see figure 2 as shown, figure 2 It is the second embodiment of the present invention, a kind of graphite cleaning device of the present invention, it is characterized in that, comprises:

[0052] A shell 8, the shell 8 is a hollow cuboid structure, and the shell 8 is made of stainless steel or quartz material;

[0053] A graphite base support 10, the graphite base support 10 is located at the bottom of the shell 8;

[0054] A graphite heater 9, the graphite heater 9 is a box structure, and the graphite heater 9 is positioned above the graphite base support 10;

[0055] A thermal insulation material 12, the thermal insulation material 12 surrounds the periphery of the graphite heater 9;

[0056] An upper cover 7, the upper cover 7 is located above the shell 8;

[0057] A energized electrode 13, the energized electrode 13 is connected to the graphite heater 9 in the casing 8, and the heating working temperature range of the energized electrode 13 is 400°C-2800°C;

...

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Abstract

The invention discloses a graphite cleaning device, which comprises the following parts: case, which is hollow rectangular structure; graphite base rack, which is set on the bottom of case; graphite heater, which is box structure on the graphite base rack; insulating material, which surrounds the periphery of graphite heater; upper lid, which lies on the case; inductive coil, which is twisted on the periphery of case; three-path gas inlet, which is set on one side of case separately; tail gas discharge, which is set on the other side of case; temperature-control heat couple, which is under the case to connect graphite base rack. When the device cleans graphite base, it doesn't occupy equipment with high using rate for equipment.

Description

technical field [0001] The present invention is designed to the field of manufacturing semiconductor equipment, and in particular relates to baked deposition structures in MOCVD equipment. Background technique [0002] Metal-organic chemical vapor deposition (MOCVD) was first proposed in the 1960s. After the development in the 1970s and 1980s, it has become the mainstream technology for the growth of optoelectronic materials such as AsGa and InP in the 1990s. Mainstream approach for nitride LEDs. [0003] The principle of MOCVD equipment is that different raw materials reach the substrate through the gas injection pipe, and usually react at a temperature of 200-2000°C (depending on the requirements of different materials) to grow the required thin film material. During the reaction process, reaction products and intermediate products are not only deposited on the substrate material, but also deposited on the inner wall of the reaction chamber and the graphite base. In orde...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/00C23C16/18H01L21/205
Inventor 焦春美刘祥林
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI