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Method for detecting chemical and mechanical flattening endpoint

A flattening method and end-point detection technology, which is applied in the direction of grinding machine parts, surface-polished machine tools, electrical components, etc., can solve problems such as unfavorable production efficiency and long CMP process time, so as to reduce time consumption and avoid mistakes. Inspection, the effect of a wide range of applications

Inactive Publication Date: 2009-06-10
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when this method is used for endpoint detection, the time consumed for the planarization of the micro-relief layer of the material that does not constitute the main body of the endpoint detection accounts for a large proportion of the overall planarization time, which makes the CMP process take a long time and is not conducive to production efficiency. improvement

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  • Method for detecting chemical and mechanical flattening endpoint
  • Method for detecting chemical and mechanical flattening endpoint
  • Method for detecting chemical and mechanical flattening endpoint

Examples

Experimental program
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no. 1 example

[0067] As the first embodiment of the present invention, the specific implementation steps of applying the method of the present invention to carry out the CMP endpoint detection of the medium layer are:

[0068] First, basic endpoint detection is performed at a single planarization rate using swatches.

[0069] The basic end point detection is the end point detection on the sample by using the existing technology. The obtained endpoint detection image is as figure 2 shown in . Hereinafter, the endpoint detection performed by applying the method provided by the present invention is called the actual endpoint detection.

[0070] image 3 To illustrate the cross-sectional view of the planarized material structure of the first embodiment of the method of the present invention, as image 3 As shown, the dielectric layer 20 fills the gap 71 in the metal layer and covers the upper surface area of ​​the metal layer 70 . The dielectric layer 20 covering the upper surface area of...

no. 2 example

[0080] As the second embodiment of the present invention, applying the method of the present invention to carry out the CMP endpoint detection of the filling material in the shallow trench isolation (Shallow Trench Isolation, STI) region, the specific implementation steps are as follows:

[0081] First, basic endpoint detection is performed at a single planarization rate using swatches.

[0082] Figure 5 To illustrate the cross-sectional view of the planarized material structure of the second embodiment of the method of the present invention, as Figure 5 as shown,

[0083] The inside of the shallow trench 80 and the surface of the non-trench area in the substrate 90 cover the material of the dielectric layer 20; the base 90 includes a semiconductor substrate and an upper isolation layer and a barrier layer; the surface of the non-trench area in the covering substrate 90 The dielectric layer 20 includes a micro-relief layer 30, a relief growth layer 40, and a uniform layer ...

no. 3 example

[0094] As the third embodiment of the present invention, the specific implementation steps of applying the method of the present invention to detect the CMP end point of the metal layer are as follows:

[0095] First, basic endpoint detection is performed at a single planarization rate using swatches.

[0096] Figure 7 To illustrate the cross-sectional view of the planarized material structure of the third embodiment of the method of the present invention, as Figure 7 As shown, the metal layer 70 covers the surface of the dielectric layer 20 and its inner through hole 21; the metal layer 70 covering the surface of the dielectric layer 20 and its inner through hole 21 includes a micro-relief layer 30, a relief growth layer 40 and a uniform layer 50. The undulation growth layer is located above the 41 plane at the lowest point of the surface undulation and below the bottom surface of the micro-relief layer; the uniform layer is a part of the metal layer that needs to be grou...

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Abstract

A chemical-mechanical flattening end-point detection method comprises that basic end-point detection is implemented only with the flattening velocity of the sample film; on the basis of the basic end-point detection results, the actual end-point detection process is divided into a first and second steps; a first flattening velocity and a second flattening velocity are set in the actual end-point detection process; the first step is implemented with the first flattening velocity and the second step is implemented with the second flattening velocity; carry out the first and second steps in sequence and complete the actual end-point detection. With the end-point detection method, the detection reliability can be ensured and the end-point detection time can be shortened; at the same time, themethod is characterized by wide application range.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical mechanical planarization endpoint detection method. Background technique [0002] Chemical mechanical planarization (Chemical Mechanical Planarization, CMP) is a global surface planarization technology used in the semiconductor manufacturing process to reduce the variation of wafer thickness and the impact of surface topography. Since CMP can accurately and uniformly planarize the wafer to the required thickness and flatness, it has become the most widely used surface planarization technology in the semiconductor manufacturing process. [0003] In the actual production process, endpoint detection is used to measure whether the CMP has ground the material to the required thickness. Some CMP applications are simple for endpoint detection. For example, when planarizing the tungsten cap layer, due to the different planarization rates between the metal ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B29/02B24B49/02H01L21/304
Inventor 邓永平
Owner SEMICON MFG INT (SHANGHAI) CORP