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An imaging interference photo etching method adopting grating combination and photo etching system therefor

A technology of imaging interference and imaging optics, which is applied in the improvement field of imaging interference lithography technology, to achieve the effects of small size, fast and accurate control, and improvement of image quality

Inactive Publication Date: 2009-07-08
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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Problems solved by technology

[0003] The technical problem to be solved by the present invention is: to overcome the deficiencies of the existing methods and systems, to provide a three-time exposure that can be completed by simply rotating the rotary diaphragm twice between the three exposures, without the need for During the adjustment of optical path and alignment, the complexity of optical path adjustment and image alignment problems can be reduced, the exposure time can be shortened, and the imaging interference lithography method and its imaging interference lithography system can improve the exposure efficiency of imaging interference lithography

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  • An imaging interference photo etching method adopting grating combination and photo etching system therefor
  • An imaging interference photo etching method adopting grating combination and photo etching system therefor
  • An imaging interference photo etching method adopting grating combination and photo etching system therefor

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Embodiment Construction

[0022] like figure 1 As shown, the method of the present invention comprises the following steps:

[0023] (1) a grating combination 6 consisting of a horizontal grating and a vertical grating is placed between the beam expander collimator 4 and the mask 7, for respectively providing the Y-direction oblique illumination beam and the X-direction oblique illumination beam;

[0024] (2) place the rotary diaphragm 5 before the above-mentioned grating combination 6 again;

[0025] (3) When the rotating diaphragm 5 is at the initial position of 0°, the parallel light beam that directly passes through the light-transmitting holes on the rotating diaphragm 5 and the grating combination 6 vertically illuminates the mask 7, and is imaged by the imaging optical system 8 to the resist On the agent substrate 9, the low-frequency component exposure of the mask pattern is realized;

[0026] (4) Rotating the diaphragm 5 from the initial position of 0° by 90°, so that the parallel beam X dir...

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Abstract

An imaging interference lithography method using grating combination and its lithography system, which is characterized in that a grating combination composed of a horizontal grating and a vertical grating is used to cooperate with a rotating diaphragm, and is a mask in the imaging interference lithography system Provides oblique illumination in the Y direction and oblique illumination in the X direction, which simplifies the complex and time-consuming process of adjusting the optical path system between three exposures in traditional imaging interference lithography. During the entire exposure process, you only need to rotate the diaphragm twice to Complete the three exposure process required by imaging interference lithography, the system optical path is simple and compact, easy to adjust the optical path, shorten the exposure time, improve the exposure efficiency of imaging interference lithography, and is conducive to the practical application of imaging interference lithography.

Description

technical field [0001] The invention relates to an imaging interference lithography method using a grating combination and an imaging interference lithography system, which belongs to the improvement of the imaging interference lithography technology for generating fine patterns. Background technique [0002] A general imaging interference lithography system consists of a laser, a beam expander, a collimator, a mirror, a mask, an imaging optical system and a resist substrate. After the first exposure, adjust the optical path for the second exposure. After the second exposure, adjust the optical path for the third exposure to complete the three exposures required for imaging interference lithography, and there is still an image alignment problem between the three exposures. Literature Steven R.J. Brueck, Imaging interferometric Iithography, Microlithography World, winter 1998, 2-10 and literature Xiaolan Chen and S.R.J. Brueck, Imaging interferometric Iithography: A wavelengt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G02B27/00
Inventor 张锦冯伯儒刘娟
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI