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Charge pump circuit

A charge pump and circuit technology, applied in the direction of conversion equipment without intermediate conversion to AC, can solve the problems of leakage, reduce the rectifier tube, reduce the conduction voltage of the rectifier tube, etc., and achieve high working voltage, low threshold, and offset voltage. small effect

Active Publication Date: 2009-08-05
SHANGHAI HUAHONG INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But there are three problems in doing so, first Gv=V n -V n-1 , =ΔV-Vtn, means that reducing the conduction voltage of the rectifier can only reduce the influence of Vtn but cannot eliminate the voltage loss caused by Vtn. Secondly, the reduction of the conduction voltage of the rectifier will generally bring a certain leakage. The third , to reduce the conduction voltage of the rectifier puts forward special requirements for the process

Method used

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Embodiment Construction

[0016] The present invention will be described in detail below in conjunction with the accompanying drawings and its preferred embodiments.

[0017] figure 1 It is the circuit structure of the first-stage charge pump in the charge pump circuit of the present invention, figure 2 It is a schematic diagram of signals related to the first-stage charge pump circuit of the present invention.

[0018] Such as figure 1 Shown, C 1 , C 2 , P1, P2 form a first-stage charge pump, C 2 ’ as the input of the lower charge pump. Discuss the working situation of one clock cycle when the circuit works in steady state. The initial state is CP=0, NCP=0, ngcp=1 (high level=2*Vdd), and the node IN has established a stable reference potential (lowest Potential) V0.

[0019] Step 1: CP jumps up, Vin is lifted to V0+Vdd, and Vout=V0+Vdd-ΔV, where -ΔV represents the voltage loss caused by charge transfer.

[0020] Step 2: ngcp jumps down, because the highest potential of node A before is VA=V...

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Abstract

The invention discloses a circuit for a charge pump. The invention adopts a PMOS tube as a rectifier of the charge pump. As long as the voltage of power supply is more than the threshold value of the PMOS tube, the charge pump can be operated regularly, and when one level of the charge pump is increased, one level of power supply voltage is increased. Thus, the invention is a novel circuit for the charge pump with low working voltage and high conversion efficiency.

Description

technical field [0001] The invention relates to a charge pump circuit, in particular to a novel charge pump circuit with low working voltage and high conversion efficiency using PMOS as a rectifier tube of the charge pump. Background technique [0002] In memory circuits, it is generally necessary to use a high voltage of more than ten volts to program memory cells. Since the power supply voltage is generally between 1 and 5V, a charge pump is generally designed inside the chip, and its function is to convert a lower programming voltage into a higher programming voltage. [0003] The traditional charge pump circuit generally adopts a circuit called DICKSON type, the schematic diagram is as follows Figure 5 As shown, considering the process, the actual circuit often replaces the diode with an NMOS tube. [0004] The characteristic of this structure is that the voltage raised by each stage (including a capacitor and a rectifier diode) is the voltage gain, and the voltage gai...

Claims

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Application Information

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IPC IPC(8): H02M3/07
Inventor 王光春
Owner SHANGHAI HUAHONG INTEGRATED CIRCUIT