Epitaxially growing equipment

Abstract

It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer holder) installed within the reactor and having a wafer mounting portion (pocket hole) on a surface thereof for holding a wafer, a gas supply member (gas inlet pipe) for supplying raw material gas towards the wafer, a heating member (heater) for heating the wafer, and a heat uniformizing member (susceptor) for holding the wafer containing member and uniformizing heat from the heating member, wherein raw material gas is supplied into the reactor in a high temperature environment while heating the wafer by using the heating member via the heat uniformizing member and the wafer containing member, to form a film grown on a surface of the wafer, and wherein a recess portion depressed in a dome shape is formed at a back side of the wafer containing member.

Description

technical field [0001] The present invention relates to a vapor phase growth apparatus for vapor-phase-growing a thin film of a compound semiconductor or the like on a wafer surface by supplying a source gas at a high temperature while heating a wafer, and particularly relates to a device for uniformizing the in-plane temperature distribution of a wafer technology. Background technique [0002] Conventionally, the vapor phase growth method is used in various fields in the industry. In this vapor phase growth method, it goes without saying that it is an essential item that the film thickness, composition, and doping concentration are uniform throughout the entire in-plane region of the thin film grown on the wafer. Furthermore, various methods can be considered as means for realizing uniformity of the film thickness and the like in the entire in-plane area, but thermal uniformity when heating the wafer is the most important element technology. [0003] Figure 5 It is a sec...

AI Technical Summary

Problems solved by technology

That is: the contact between the solids such as the bracket 4 and the wafer holder 3, the wafer holder 3 and the wafer 2 is not a complete surface contact, but a discontinuous surface contact (a collection of point contacts). The thermal resistance on each boundary surface is not uniform, causing deterioration of the temperature distribution of the wafer holder 3 (including the wafer 2)

As a result, in the conventional vapor phase growth apparatus, the in-plane temperature distribution of the wafer 2 is not uniform, so it is difficult to vapor-grow a thin film with excellent uniformity over the entire in-plane area of ​​the wafer 2.

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