Method for manufacturing semiconductor device
A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problem of increasing the number of processes
Inactive Publication Date: 2007-09-12
SANYO ELECTRIC CO LTD
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- Summary
- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
In addition, a process of depositing an anti-reflection film on the bottom surface of the opening portion 22 after forming the opening portion 22 may be required.
From these points of view, the number of steps increases in the process of forming the opening 22 using the polysilicon pad 32 as an etch suppressing film.
Method used
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Embodiment Construction
[0022] Hereinafter, an embodiment of the present invention (hereinafter referred to as embodiment) will be described with reference to the drawings.
[0023] The present embodiment is a photodetector mounted in an optical pickup mechanism of an optical disc playback device such as a CD or a DVD.
[0024] FIG. 3 is a schematic plan view of a semiconductor element that is a photodetector according to the present embodiment. The photodetector 50 is formed on a semiconductor substrate made of silicon. The photodetector 50 is composed of a light receiving unit 52 and a circuit unit 54 . The light receiving unit 52 includes four PIN photodiodes (PD) 56 arranged in a 2×2 manner, and divides light incident on the substrate surface from the optical system into four parts and receives the light. The circuit unit 54 is arranged, for example, around the light receiving unit 52 . The circuit unit 54 is formed of, for example, circuit elements such as transistors. Using these circuit el...
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A step for etching a wiring-structure layer and the like on a light-receiving part of a light detector and forming an apertured part is simplified. A silicon nitride film 86 is formed on a semiconductor substrate 60 by CVD or the like, and a layered structure 88 that has the wiring-structure layer is then formed. A photoresist film 122 having an aperture above the light-receiving part is formed on the layered structure 88 , and the layered structure 88 is etched using the photoresist layer as an etching mask. The type of etching and the conditions under which the etching is performed are such that the etching selectivity of the interlayer insulating film with respect to a silicon nitride film will be maintained. In the etching process, the silicon nitride film 86 functions as an etching stopper. The silicon nitride film 86 that has been exposed at a bottom part of the apertured part 116 constitutes an antireflective film.
Description
technical field [0001] The present invention relates to a method of manufacturing a semiconductor device in which a light-receiving element is disposed on a semiconductor substrate, and more particularly to a method of etching a stacked layer on a semiconductor substrate to form an opening. Background technique [0002] In recent years, optical discs such as CDs (Compact Disks) and DVDs (Digital Versatile Disks) have taken a large place as information recording media. These optical disc playback devices irradiate laser light along the tracks of the optical disc with an optical pickup mechanism, and detect the reflected light. Then, the recorded data is reproduced based on the change in the reflected light intensity. [0003] Since the data rate read from the optical disk is very high, the photodetector for detecting the reflected light is composed of a semiconductor element using a fast-response PIN photodiode. The weak photoelectric conversion signal generated by the ligh...
Claims
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IPC IPC(8): H01L21/822H01L21/768
CPCH01L2924/0002H01L31/0216H01L27/1443H01L31/105H01L31/18H01L2924/00
Inventor 山田哲也野村洋治
Owner SANYO ELECTRIC CO LTD