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Semiconductor heterostructure

A heterostructure and semiconductor technology, applied in semiconductor devices, electrical components, nanotechnology, etc., can solve the problems of reducing carrier efficiency and carrier non-resonance

Inactive Publication Date: 2007-10-17
OPTOGAN OY
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, one disadvantage of this solution is that in this case the tunneling of the carriers is off-resonant, so for any reasonable barrier thickness the reflection of the carriers by the barrier is significantly reduced The efficiency of trapping carriers into the light-generating region
In thermoelectric materials, however, spontaneous polarization still exists, even in relaxed or lattice-mismatched layers, which are nonzero

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Embodiment Construction

[0046] In FIG. 1 , a schematic diagram of a cross-section of a semiconductor heterostructure is shown. The heterostructure, generally indicated at 10, includes an injection region consisting of a first emitter layer 11 and a second emitter layer 12, a light generating layer 13, and an electron trapping region 14 consisting of a trapping layer and a confinement layer.

[0047] FIG. 2 depicts a schematic energy band diagram of the heterostructure shown in FIG. 1 . The trapping region is the narrow bandgap layer adjacent to the second emitter layer. A layer with a wide bandgap between the trapping layer and the light generating layer is a confinement layer. The width and composition of the trapping and confinement layers are adjusted so that the energy difference between one of the localized electronic levels of the trapping layer and the bottom of the conduction band in the electron emitter is equal to the photophonon energy. Electron trapping into the narrow bandgap trapping ...

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Abstract

A strained semiconductor heterostructure (10) comprises an injection region comprising a first emitter layer (11) having p-type conductivity and a second emitter layer (12) having n-type conductivity, and a light generation layer (13) positioned between the first emitter layer (11) and the second emitter layer (12). An electron capture region (14) is positioned between the light generation layer (13) and the second emitter layer (12), said electron capture region comprising a capture layer (16) adjacent to the second emitter layer, and a confining layer (15) adjacent to said electron capture layer. According to the present invention, the widths and materials of the confining and capture layers (15, 16) are selected to provide energy difference between one of localized energy levels for electrons in the capture layer (16) and the conduction band bottom of the second emitter layer (12) equal to the energy of the optical phonon.

Description

technical field [0001] The present invention relates to a semiconductor heterostructure for a light-emitting device, in particular to a structure composed of a lattice-mismatched semiconductor material. The heterostructure includes an injection region consisting of two emitters, a light generation layer, and an electron trapping region. More specifically, the heterostructure may be made of thermoelectric materials, in particular, nitrides of group III metals and their alloys. The heterostructure can also be made of nitrogen including arsenides of Group III metals and phosphides. Background technique [0002] The external quantum efficiency of a light emitting diode, referred to herein as an LED, can be defined as: [0003] n ext = γ · η cap ·η int ·η out , [0004] where γ is the injection efficiency, η cap is the efficiency of trapping carriers into the light-generating region, η int is the radiation efficiency generated by the radiative recombination of carriers i...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/32
CPCH01L33/32H01L33/06B82Y20/00
Inventor 马克西姆·欧得诺莱多夫弗拉德斯拉夫·鲍格诺夫
Owner OPTOGAN OY
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