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Photosensing element and its manufacture method

A light-sensing element and light-sensing technology, which is applied in the direction of electrical components, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as affecting the performance of components and reducing the sensitivity of light sensors

Active Publication Date: 2007-10-24
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no obscuring object above the intrinsic region of the PIN diode, so under normal circumstances, ion-implanted dopants (such as N-type phosphorus ions, etc.) will be implanted into the intrinsic region at the same time, thereby making the photosensor The sensitivity of the intrinsic region will be greatly reduced after the dopant is implanted, which will seriously affect the performance of the entire device

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  • Photosensing element and its manufacture method
  • Photosensing element and its manufacture method
  • Photosensing element and its manufacture method

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Embodiment Construction

[0071] The present invention mainly forms a conductive layer on the relative intrinsic region of the insulating layer after the insulating layer is formed, so the conductive layer can be used as a barrier layer in the subsequent ion implantation to protect the intrinsic region during ion implantation. N-type dopants such as phosphorus ions are not implanted during the process. According to a preferred embodiment of the present invention, the conductive layer blocks the implantation of phosphorous ions in the present invention, which can effectively increase the photosensitivity of the photo-sensing element, thereby improving the overall performance of the photo-sensing element.

[0072] Please refer to FIG. 2 to FIG. 3 . FIG. 2 to FIG. 3 are schematic diagrams of fabricating the light sensing element according to the first embodiment of the present invention. As shown in FIG. 2 , a base 42 is provided first. The material of the substrate 42 includes a transparent material (su...

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Abstract

The disclosed photo sensor comprises: from bottom to top, a substrate, a semi-conductor layer with two doping areas and an intermediate intrinsic area, an insulation layer, an inner dielectric layer with at least three holes to expose partial the insulation layer and two doping areas, and two electrodes partial forming on the dielectric layer to connect with two doping areas through two holes. This invention improves entire performance of the element.

Description

technical field [0001] The present invention relates to a photo-sensing element, in particular to a photo-sensing element and a manufacturing method thereof (PHOTO DETECTOR AND METHOD FOR FORMING THEREOF). Background technique [0002] Today's various consumer electronics products, whether it is a computer's LCD monitor, LCD TV, plasma TV or mobile phone, personal digital assistant (PDA), digital camera and display screen of a handheld game console, or even an automatic teller machine (ATM) ) of the touch screen, are widely used flat-panel display technology. Therefore, the consumer's requirements for the color and brightness sensitivity of the flat panel display screen are greatly improved. Based on the above requirements, most of today's displays are equipped with light-sensing elements that can sense external light, so that when the external ambient light changes, the flat-panel display can appropriately change the brightness and color of the screen, allowing consumers n...

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Application Information

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IPC IPC(8): H01L31/105H01L31/18H01L27/144
CPCY02P70/50
Inventor 翁健森陈亦伟赵志伟林昆志
Owner AU OPTRONICS CORP