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Method for producing nano-beam with right-angled triangle cross-section by wet method corrosion technique

A right-angled triangle, wet etching technology, applied in the process of producing decorative surface effects, metal material coating process, decorative art, etc., can solve the problems of high price and unsuitable for mass production

Inactive Publication Date: 2007-10-31
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its disadvantages are: expensive, not suitable for mass production

Method used

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  • Method for producing nano-beam with right-angled triangle cross-section by wet method corrosion technique
  • Method for producing nano-beam with right-angled triangle cross-section by wet method corrosion technique
  • Method for producing nano-beam with right-angled triangle cross-section by wet method corrosion technique

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Embodiment 1

[0060] The silicon wafer used in this example is a (100) silicon-on-insulator wafer, that is, a (100) SOI silicon wafer, the upper silicon layer is about 200 nm, and the buried silicon oxide layer is about 400 nm. The specific process includes four main steps: (1) fabrication and thinning of steps, (2) side wall protection, (3) beam forming, and (4) beam release. Each process step is described in detail below.

[0061] (1) Manufacturing and thinning of steps

[0062] The steps are fabricated using a common photolithographic etching process. First carry out a photolithography, the pattern of the mask plate is as shown in Figure 5. During the photolithography, the step direction of the console is perpendicular to the cutting edge direction of the silicon wafer (110), and then the photoresist is used as a mask, and the upper layer in the window is plasma etched silicon, the steps shown in Figure 1 are formed.

[0063] Next, the step is thinned, and the present invention uses a...

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Abstract

The making of right angled nanometer beam machining using wet corrosion features the use of crystalline silicon (100) anisotropy, automatic stop of corrosion after the formation of the nanometer beam, whose cross section is right angled triangle, which oblique edge being 100, side 110, bottom 100, height of the oblique and bottom of the beam being controlled by oxidization. It only needs one block of optical etching board to realize nanometer machining.

Description

technical field [0001] The present invention relates to a kind of nano-beam processing method that uses wet etching process to make cross-section is right angle triangle, relates to a kind of processing method that makes single crystal silicon nano-beam on (100) SOI silicon chip more precisely, the cross-section of beam It is a right triangle, and the widths of the three sides are all less than 100nm. It belongs to the field of micro / nano processing. Background technique [0002] NEMS (Nano-Electro-Mechanical-System, Nano-Electro-Mechanical-System) technology is developed on the basis of MEMS (Micro-Electro-Mechanical-System, Micro-Electro-Mechanical-System) technology, and its characteristic is that the characteristic scale of key components is less than 100nm. It is an important part of nanotechnology. As the core part of various nanoelectromechanical devices such as nanoelectromechanical resonators and resonant sensors, nanobeams are one of the basic structures of nanoe...

Claims

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Application Information

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IPC IPC(8): B81C1/00
Inventor 许科峰杨恒王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI