Method of manufacturing an acoustic mirror for a piezoelectric resonator and method of manufacturing a piezoelectric resonator
A technology of piezoelectric resonators and acoustic mirrors, applied in the field of manufacturing piezoelectric resonators, manufacturing acoustic mirrors, and manufacturing acoustic mirrors for piezoelectric resonators, can solve the problem of increasing the activation of unnecessary modes and reducing resonance issues such as the quality of the device, to achieve the effect of minimum incentives and high quality
Inactive Publication Date: 2007-12-05
康特瑞森有限责任公司
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[0009] Disadvantages of the approach described based on FIG. 2 are the thinner layers at the corners of the mirror recess 126 and the small but significant topological extension of the resonator region 122 defined by reference numeral 130, which again increases the unwanted mode activation and reduces the resonator mass
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[0034] In the following description of a preferred embodiment of the invention, the same or similar action elements are identified with the same reference numerals.
[0035] In the following description, it is assumed that the layer to be constructed has a high acoustic impedance. The present invention is not limited to this embodiment, and the method of the present invention can also work in a full analog mode when the conductive layer has a small acoustic impedance.
[0036] Based on Fig. 3, the basic principle of the present invention will be described in more detail. In FIG. 3(a), a substrate 100 is shown, on its upper surface 104 a first layer 106b having a low acoustic impedance is disposed. 1 , such as an oxide layer, on which a first layer 106a with high acoustic impedance is sequentially deposited over the entire area 1 , such as a tungsten layer or another suitable conductive layer. Additionally, as described above, one or more intermediate layers may be provided ...
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Fabrication of mirrors comprising piezoelectric resonators with high and low acoustic impedance layers in an overlapping arrangement, wherein a first layer (106b1, 106b2) is fabricated first and a second layer ( 106a1, 106a2), whereby the second layer (106a1, 106a2) partially covers the first layer (106b1, 106b2). A planarization layer (132) is then applied over the first layer (106b1, 106b2) and the second layer (106a1, 106a2). Thereafter, a portion (134) of the second layer (106a1, 106a2) is exposed by building up the planarization layer (132), wherein the portion is associated with the active region (122) of the piezoelectric resonator. Finally, the final structure is planarized by removing the portion (132a, 132b) of the planarization layer (132) remaining outside this portion.
Description
technical field [0001] The present invention relates to the field of piezoelectric resonators, such as BAW (bulk acoustic wave) resonators, and in particular to methods of manufacturing acoustic mirrors for piezoelectric resonators, and methods of manufacturing piezoelectric resonators. Typically, the present invention relates to a method of fabricating an acoustic mirror with a high degree of planarization and excellent uniformity in layer deposition and planarization throughout the mirror structure. Background technique [0002] Radio frequency filters based on BAW resonators are of great importance in many radio frequency (RF) applications. Essentially, there are two concepts of BAW resonators, the so-called thin-film BAW resonator (FBAR) on the one hand and the so-called solid-state mounted resonator (SMR) on the other. A thin-film BAW resonator includes a membrane on which a layer sequence includes a configuration of a lower electrode, a piezoelectric layer, and an upp...
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Login to View More IPC IPC(8): H03H3/08
CPCH03H3/02H03H2003/025
Inventor R·塔尔汉默S·马克斯泰纳G·法廷格
Owner 康特瑞森有限责任公司