Thin film transistor array panel and method for manufacturing the same
A technology of thin-film transistors and array panels, which is applied in transistors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., and can solve problems such as unstable characteristics of thin-film transistors
Inactive Publication Date: 2008-01-02
SAMSUNG ELECTRONICS CO LTD
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- Application Information
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Problems solved by technology
In the case of using a bottom gate, since the contact characteristics between the organic semiconductor and the gate insulating layer vary according to the taper angle of the source-drain electrodes, the characteristics of the thin film transistor are not stable
Method used
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[0029] The invention will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.
[0030] In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like reference numerals denote like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or directly connected to the other element. , or intermediate elements can also appear. In contrast, when an element is described as being "directly on" another element, there are no intervening elements present. Like reference numerals designate like elements throughout. As us...
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A thin film transistor array panel including a substrate, a plurality of data lines disposed on the substrate, an interlayer insulating layer disposed on the data lines and including contact holes through which the data lines are exposed, a plurality of source electrodes, each of the source electrodes disposed on the interlayer insulating layer and connected to the data line through the contact hole, a plurality of pixel electrodes, each of the pixel electrodes disposed on the interlayer insulating layer and including a drain elsetrode that faces a source electrode, organic semiconductors disposed on and partially overlapping the source electrodes and the drain electrodes, a gate insulating layer disposed on the organic semiconductors and gate lines disposed on the gate insulating layer and including gate electrodes overlapping the organic semiconductors.
Description
technical field [0001] The invention relates to a thin film transistor array panel and a manufacturing method thereof. Background technique [0002] Flat panel displays, such as liquid crystal displays ("LCD"), organic light emitting diode ("OLED") displays, electrophoretic displays, etc., include pairs of field generating electrodes with electro-optic active layers interposed therebetween. LCDs include a liquid crystal layer as an electro-optical active layer, and OLED displays include an organic light-emitting layer as an electro-optic active layer. [0003] One of the pair of field generating electrodes is connected to the switching element and receives an electrical signal. The electro-optical active layer converts the electrical signal into an optical signal, thereby displaying an image. [0004] Flat panel displays use a thin film transistor ("TFT") as a switching element, which is a three-terminal element. The flat panel display includes gate lines transmitting sca...
Claims
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IPC IPC(8): H01L27/28H01L51/05H01L21/84H01L51/40
CPCH01L27/3274H01L27/3276H01L27/283H01L51/0558H01L51/0036H01L29/41733H10K19/10H10K59/125H10K85/113H10K59/131H10K10/484H10K10/464
Inventor 宋根圭金保成赵承奂
Owner SAMSUNG ELECTRONICS CO LTD