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Method for recovering flash memory

A recovery method and technology of flash memory, which is applied in the field of recovery of flash memory, can solve the problems of increasing flash memory and reducing the service life of flash memory, etc.

Inactive Publication Date: 2008-01-23
FLUIDITECH IP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Flash memory will increase due to bad blocks, reducing the service life of flash memory

Method used

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  • Method for recovering flash memory
  • Method for recovering flash memory
  • Method for recovering flash memory

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Experimental program
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Embodiment Construction

[0015] Due to the electrical charge and discharge characteristics of flash memory, its read and write times are physically limited. For the reading and writing of a flash memory block, the manufacturer will count the number of reads and writes in the internal firmware. When the maximum number of reads and writes is reached, the block will be marked as an unused unit. Therefore, the flash memory may shorten the service life of the flash memory under extremely frequent use. For the flash memory, the present invention provides a recovery method to reorganize the location records of bad blocks. Before performing the recovery method, it is necessary to ensure that the data in the flash memory has been temporarily stored in an additional storage medium (such as a computer hard disk or a portable electronic device) to ensure that the data in the flash memory will not be lost during the recovery method. An example of this recovery method is as follows.

[0016] Fig. 1 is a working f...

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Abstract

The utility model discloses a flash memory recovery method, which re-plan the capacity of the cell, so that the bad sectors are centralized planned in the same cell which is labeled as the useless cell. Check whether the bad sectors of each cell in the flash memory exceed the limited quantity of the pre-set bad sector inside the flash memory. If the limited quantity thereof is surpassed, the cell shall be re-distributed. The cell with the over dispersed bad sectors shall be divided into a new cell which shall be deleted. In the process of the recovery method, the bad sectors exceeding the frequency of the reusable restriction shall be cleaned so as to prolong the service life of the flash memory, so that the flash memory device can be reused though the read / write function is unavailable previously.

Description

technical field [0001] The invention relates to a recovery method of a flash memory (Flash Memory), in particular to a recovery method for reorganizing bad blocks of a storage unit (Cell) in the flash memory. Background technique [0002] The storage unit of flash memory is a basic unit (Cell), and between the gate and channel of the metal oxide semiconductor (MOS) inside it, there is an additional layer of gate oxide (gateoxide) compared with the traditional one. Floating gate. Because of this layer of floating gate, flash memory can work in three modes: writing, reading, and erasing. When negative electrons are injected into the floating gate, this basic unit is written from 1 to 0. When negative electrons are removed, this basic unit is equivalent to changing from 0 to 1, which is equivalent to the action of storage. [0003] The implementation of flash memory technology can be divided into single level cell (Single Level Cell, SLC) and multi-level cell (Multi Level Cel...

Claims

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Application Information

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IPC IPC(8): G06F12/02
Inventor 何纯淳
Owner FLUIDITECH IP
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