Substrate processing method, substrate processing apparatus and control program

Abstract

Provided are a substrate processing method, a substrate processing apparatus implementing the method, and a control program for them, the substrate processing method comprising: a step (28) of covering the surface of a substrate (W) with water; A step (10) of keeping the upper surface substantially horizontal and rotating it in a horizontal plane; and a step of spraying an air flow for drying that is thinner than the surface area of ​​the substrate (W) to the upper surface of the substrate (W) (30, 40); Water is removed from the surface of the substrate by rotation in the horizontal plane while spraying the air flow for drying, so that the cleaned substrate can be dried without locally remaining water droplets.

Description

technical field [0001] The present invention relates to a substrate processing method, a substrate processing device and a control program, in particular to a substrate processing method, a substrate processing device, and a control program for automating substrate cleaning and substrate processing without producing watermarks on substrates such as cleaned semiconductor wafers. Background technique [0002] With recent miniaturization of semiconductor devices, etc., various material films having different physical properties are formed and processed on a substrate. In particular, in the damascene wiring forming process of filling the wiring grooves formed on the substrate with metal, after the damascene wiring is formed, the excess metal is removed by a substrate polishing device (CMP), or the wiring is formed by plating. In the protective layer, films having different wettability to water, such as a metal film, a barrier film, and an insulating film, coexist on the surface ...

AI Technical Summary

Problems solved by technology

[0005] However, in the method of controlling the rotation speed of the substrate during spin drying, in a substrate where films with different wettability coexist, such as a substrate on which a damascene wiring is formed in which a hydrophilic part and a hydrophobic part are randomly generated, depending on the wiring density and the wiring density of the substrate, Due to the difference in the nature of the hydrophobic part, fine control of the rotation speed is required, and there is a problem that the process window is narrow for production

In addition, the method of spinning drying under an inert gas environment or under reduced pressure requires time to adjust the gas environment and requires more process time, so it is not suitable

On the other hand, in the method of supplying IPA vapor, the substrate needs to be held vertically and pulled up compared to single-wafer processing equipment such as CMP, and the transport mechanism becomes complicated and integration becomes difficult.

In addition, it takes time to pull up, and there is a problem that productivity decreases

Images