Image sensor for improving image quality and image sensing method using the same

An image sensor and image quality technology, applied in the field of image sensor and image sensing, can solve the problems of reduced image quality, complex manufacturing process of photoelectric conversion semiconductor devices, and low degree of color separation

Inactive Publication Date: 2008-02-06
SAMSUNG ELECTRONICS CO LTD
View PDF2 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such an image sensor has problems in that the manufacturing process of the photoelectric conversion semiconductor device is complicated, and the degree of color separation by the vertical structure is lower than that of the color filter, thus becoming a limitation in solving the problem of image quality degradation.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Image sensor for improving image quality and image sensing method using the same
  • Image sensor for improving image quality and image sensing method using the same
  • Image sensor for improving image quality and image sensing method using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

[0039] 2 is a perspective view of an image sensor for improving image quality according to an exemplary embodiment of the present invention, and FIG. 3 is a partial plan view illustrating a configuration of a color filter array shown in FIG. 2 .

[0040] As shown in FIG. 2 , an image sensor for improving image quality according to an exemplary embodiment of the present invention includes a scanning unit 140 , a color filter array 120 and a photoelectric conversion semiconductor device 110 . In this case, it is preferable that the microlens array 130 is formed on top of the color filter array 120 .

[0041] By connecting an end of the scanning unit 140 to the color filter array 120, the scanning unit 140, which is a support moving on one plane, functions as a support capable of fixedly mounting the color filter array 120. The scanning unit 140 may...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Provided are an image sensor for improving image quality and an image sensing method using the same, which can improve the quality of a sensed image without changing resolution of a color filter array and a photoelectric conversion semiconductor device for sensing an image. The image sensor for improving image quality includes: a scanner unit movable on a plane; a color filter array fixed on the scanner unit; and a photoelectric conversion semiconductor device including a plurality of pixels aligned beneath the color filter array.

Description

technical field [0001] The present invention relates to an image sensor and an image sensing method for improving image quality, and in particular to an image sensor for improving image quality and an image sensing method using the same, which can improve the sensed image quality without The resolution of the color filter array and the photoelectric conversion semiconductor device for sensing an image is not changed. Background technique [0002] As is generally known in the art, image sensors convert optical information in one or more dimensions into electrical signals. Among image sensors, a photoelectric conversion semiconductor device that converts an optical image using a semiconductor substrate into an electrical signal is classified into two types, a metal oxide semiconductor (MOS) type and a charge coupled device (CCD) type. [0003] A Complementary Metal Oxide Semiconductor (CMOS) image sensor is a device that converts an optical image into an electrical signal by ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/335H04N3/15G02B5/20H04N9/07
CPCH04N1/3876H04N1/028H01L27/14621G02B3/0056H04N1/02805G02B5/201H04N25/48
Inventor 闵栋基洪承范
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap