Method for improving homogeneity of oxidation film CMP
A uniformity and oxide film technology, applied in the direction of surface polishing machine tools, electrical components, metal processing equipment, etc., can solve problems such as the influence of device electrical properties, and achieve the effects of improving surface planarization, improving uniformity, and improving stability
Inactive Publication Date: 2008-02-13
SHANGHAI HUA HONG NEC ELECTRONICS
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Problems solved by technology
However, due to the physical characteristics of its material, the deformation during the grinding process causes dishing in some low areas of the wafer surface, especially in chemical mechanical polishing (Chemical Mechanical Polishing) of shallow trench isolation (Shallow Trench Isolation, STI). , CMP) process, a large depression is generated in the large isolation structure (trench), which affects the electrical performance of the device
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[0021] The method for improving the CMP uniformity of the oxide film of the present invention comprises the following steps:
[0022] (1) In the first stage of main grinding, use a high-hardness grinding pad to grind the surface of the wafer to eliminate the level difference;
[0023] (2) In the second stage of the main grinding, the surface of the wafer ground in step (1) is ground with a medium-hardness grinding pad.
[0024] The method of the present invention is applicable to the chemical mechanical polishing (shallowtrench isolation CMP, STI CMP) that comprises shallow trench isolation, the chemical mechanical polishing (interlayer dielectric CMP, ILD CMP) of interlayer insulation film, the chemical mechanical polishing of intermetallic insulating medium (inter-metal dielectric CMP, IMD CMP) and other oxide film CMP processes that have a step height on the wafer surface before the chemical mechanical polishing process.
[0025] Take the Chemical Mechanical Polishing (CMP...
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The present invention discloses a method for improving the evenness of oxidation film chemical-mechanical polishing; the method comprises the following steps that high-rigidity grinding pad is adopted to grind the wafer surface in the process of the major grinding stage to remove the segment difference; grinding pad of medium-rigidity is adopted to grind the surface of the wafer after the step mentioned above. With the present invention of a method for improving evenness of oxidation film CMP, high-rigidity and medium-rigidity grinding pads are adopted in different major grinding stages which improves the inside evenness of used film and local flattening grade; at the same time, the defect rate in the manufacturing procedure is controlled.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a method for improving the uniformity of chemical mechanical polishing (CMP) of an oxide film. Background technique [0002] The in-plane uniformity of the film thickness and the degree of local planarization are important indicators for the control and evaluation of the chemical mechanical polishing (Chemical Mechanical Planarization, CMP) process. In addition to the uniformity of the front film thickness and the influence of the surface condition (topography), the consumables (consumables) related to the CMP process, such as the polishing pad (pad) and the slurry (slurry), will affect the in-plane uniformity and local Degree of flattening. [0003] The polishing pad is an important consumable that affects the polishing rate and planarization effect in the CMP process. As the carrier of the polishing liquid, the polishing pad is in direct contact...
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Login to View More IPC IPC(8): B24B29/02H01L21/304
Inventor 程晓华王贝易赵正元谢煊王海军
Owner SHANGHAI HUA HONG NEC ELECTRONICS