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Method of fabricating an image sensor device with reduced pixel cross-talk

A technology of image sensor and equipment, applied in semiconductor devices, electric solid state devices, radiation control devices, etc., can solve problems such as Schottky barrier performance dependence

Inactive Publication Date: 2008-02-20
OC OERLIKON BALZERS AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage is that the performance of the Schottky barrier is very dependent on the metal / semiconductor interface state

Method used

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  • Method of fabricating an image sensor device with reduced pixel cross-talk

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Embodiment Construction

[0024] In the following description of the preferred embodiments, reference is made to the accompanying drawings, which are shown by way of explaining specific embodiments of the present invention. Those skilled in the art can understand that other embodiments and structures can also be used to make procedural changes without departing from the scope of the present invention.

[0025] Figure 1 shows an image sensor that converts the intensity of radiation 1 into corresponding currents i1 and i2 according to the intensity of illumination radiation 1. The image sensor device is a semiconductor structure composed of a CMOS semiconductor structure 3 and a photosensitive thin film layer structure 5. The photosensitive thin film layer structure 5 is deposited on the CMOS semiconductor structure 3. The CMOS semiconductor structure 3 terminates the conductive pads arranged in the matrix. FIG. 1 only shows two 7a and 7b of the matrix arranged pads. The pads 7a and 7b are electrically isola...

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Abstract

A method of fabricating an image sensor device (5) transferring an intensity of radiation (1) into an electrical current (i-i, 2) depending on said intensity, comprising the following steps in a vacuum deposition device: Depositing onto a dielectric, insulating surface a matrix of electrically conducting pads (7a, 7b) as rear electrical contacts, plasma assisted exposing said surface with pads to a donor delivering gas without adding a silicon containing gas, depositing a layer (15) of intrinsic silicon from a silicon delivering gas depositing a doped layer (17) and arranging an electrically conductive layer (19) transparent for said radiation (1) as a front contact. The method of fabricating an image-sensor-device and the image-sensor-device are avoiding disadvantages of the prior art. This means the image-sensor-device of the invention has a good ohmic contact, a low dark-current, no pixel-cross-talk and a reproducible fabrication-process.

Description

Technical field [0001] The present invention relates to a method of manufacturing an image sensor device that converts the illumination intensity of light into a current that depends on the intensity. Background technique [0002] Image sensors include circuits with integrated semiconductor circuit structures, which are used in, for example, digital cameras, cellular phones, video cameras, and mouse sensors. [0003] The two main technologies that have now been completed are: CCD (Charge Coupled Device) and CMOS (Complementary Metal Oxide Semiconductor) image sensors. In these two technologies, the sensor consists of an array of pixels. The pixels are arranged in columns and columns. Each pixel contains a photosensitive element that converts light into electric charge. In CMOS technology, CMOS circuits are integrated next to the photodiode. The integrated circuit allows individual reading of pixels. In CCD technology, the charge is transferred to the common read amplifier line by...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/142H01L27/148H01L27/146H01L31/00
CPCH01L27/14634H01L27/14645H01L27/1463H01L27/14689H01L27/146
Inventor J·-B·彻夫里尔O·萨拉斯卡E·特洛特
Owner OC OERLIKON BALZERS AG