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Method for etching having a controlled distribution of process results

An etching and process technology, applied in the field of etching with controlled process result distribution, can solve the problem of not having enough mechanism to control the temperature distribution of the substrate

Inactive Publication Date: 2008-02-27
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, conventional substrate trays do not have sufficient mechanisms to control the substrate temperature distribution across the substrate

Method used

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  • Method for etching having a controlled distribution of process results
  • Method for etching having a controlled distribution of process results
  • Method for etching having a controlled distribution of process results

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Embodiment Construction

[0049] A schematic diagram of the gate etch process is shown in FIGS. 1A-B . We have experimentally observed a strong dependence of gate etch bias on substrate temperature and will now reveal this relationship and show the dependence of the gate etch by-product adhesion coefficient on substrate temperature, which allows Control over the distribution of process results across the substrate is possible.

[0050]This redeposition rate of etch byproducts is expected to follow the gas phase concentration of byproducts and the adhesion coefficient of these byproducts. The sticking coefficient has been used in gas-surface reaction mechanisms to describe the likelihood that an incident gas-phase species 102 will be absorbed into a surface (shown as a grid structure 100), and this coefficient is typically approximated by The ratio of the number of species reactively absorbed onto a surface to the total number of incident species. The analysis of the dependence of the adhesion coeffic...

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Abstract

Embodiments of the invention generally provide methods for etching a substrate. In one embodiment, the method includes determining a substrate temperature target profile that corresponds to a uniform deposition rate of etch by-products on a substrate, preferentially regulating a temperature of a first portion of a substrate support relative to a second portion of the substrate support to obtain the substrate temperature target profile on the substrate, and etching the substrate on the preferentially regulated substrate support. In another embodiment, the method includes providing a substrate in a processing chamber having a selectable distribution of species within the processing chamber and a substrate support with lateral temperature control, wherein a temperature profile induced by the substrate support and a selection of species distribution comprise a control parameter set, etching a first layer of material and etching a second layer of material respectively different control parameter sets.

Description

technical field [0001] Embodiments of the invention generally relate to an etching method. More particularly, the present invention relates to methods for etching with controlled distribution of process results. Background technique [0002] In the fabrication of integrated circuits, precise control of various process parameters is necessary to achieve consistent results within one substrate and to achieve repeatable results from one substrate to the next. During processing, variations in temperature and temperature gradients across the substrate are detrimental to species deposition, etch rates, level coverage, feature taper angles, and other parameters of semiconductor devices. Therefore, producing a predetermined temperature distribution pattern on the substrate is one of the key requirements to achieve high throughput. [0003] The 2003 edition of the International Technology Roadmap for Semiconductors documents that reduction in transistor gate critical dimension (CD)...

Claims

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Application Information

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IPC IPC(8): H05B31/26
Inventor T·J·克罗皮尼基T·帕纳古普洛斯N·加尼W·保尔M·盛J·P·霍兰
Owner APPLIED MATERIALS INC
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