Remover composition for photoresist of semiconductor device

Abstract

The present invention relates to a photoresist remover composition used in the manufacturing process of semiconductor devices. The remover composition of the present invention, which comprises an ammonium salt, a water-soluble organic amine and water, can effectively remove the photoresist film hardened and modified by hard baking, dry etching, wet etching, ashing and / or ion implantation and the photoresist film modified by the metallic byproduct etched from the metallic film under the photoresist film in a short period time, either at high temperature or low temperature, while minimizing corrosion of the metal wiring under the photoresist film.

Description

technical field [0001] The invention relates to a photoresist remover composition for removing photoresist during the preparation of semiconductor devices such as integrated circuits (ICs), large scale integrated circuits (LSIs), very large scale integrated circuits (VLSIs) etc. . Background technique [0002] Generally, the manufacturing process of a semiconductor device includes a conductive film pattern forming step in which a photoresist pattern is formed on a conductive film existing on a surface of a semiconductor substrate, and a portion of the conductive film not covered by the photoresist is removed by etching. In the cleaning process after the patterning of the conductive film, a photoresist remover should be used to remove the photoresist pattern used as a mask during the patterning process from the conductive film. In the recent fabrication of semiconductor devices, the etching of the conductive film for patterning of the conductive film is mainly performed by d...

AI Technical Summary

Problems solved by technology

[0010] However, in order to prevent corrosion of the metal film, this remover composition is only applicable at low temperatures

Images