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Method for making floating gate discharging sharp angle

A manufacturing method and floating gate technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as differences between chips, and achieve the effects of improving topography, sharp corner topography, and stable erasing performance

Active Publication Date: 2008-04-30
SHANGHAI HUAHONG GRACE SEMICON MFG CORP +1
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  • Abstract
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Problems solved by technology

[0015] d. There will still be differences between different batches of products, resulting in differences between chips;

Method used

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  • Method for making floating gate discharging sharp angle
  • Method for making floating gate discharging sharp angle
  • Method for making floating gate discharging sharp angle

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Embodiment Construction

[0027] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0028] The invention provides a method for manufacturing floating gate discharge peaks, comprising the following steps: step 1, growing a layer of oxide layer on a silicon substrate to isolate the floating gate; step 2, first depositing a layer of floating gate on the oxide layer Gate polysilicon; step 3, deposit a layer of SiO on the floating gate polysilicon x N y As a buffer layer when it is partially oxidized; step 4, deposit a layer of silicon nitride as a hard mask for floating gate etching; step 5, use a photolithography to etch silicon nitride to partially expose The resulting floating gate is subjected to high-temperature thermal oxygen; step 6, using one photolithography to etch the silicon nitride and floating gate polysilicon that have not been opened by the previous photolithography to form floating gate discharge sharp corners. ...

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Abstract

The invention discloses a method of manufacturing a floating boom discharge sharp corner. The method comprises the steps of firstly utilizing SiH4, N2O and H2 as reaction gas and generating a layer of a SiOxNy buffer layer by the low pressure chemical vapor deposition method before silicon nitride sediment, as the buffer layer for later floating boom oxidization; in forming beak, adjusting by control technology to facilitate oxygen atoms to spread transversely toward a lateral wall underlay with certain amount. The transverse size is extended and the erasing sharp corner formed finally has a transverse extension on the upper edge, which is good for resisting the influence of subsequent floating boom etching size change on the shape of the sharp corner, improving the whole erasing performance and increasing the device stability and reliability.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing floating gate discharge sharp corners. Background technique [0002] The main features of SST (super fast) type Flash (flash memory) are: erasing (erase) is realized through the oxide film tunneling effect between the control gate and the floating gate; writing (program) is realized through channel hot electron injection. [0003] Flash memory, which is mainly used in SST IP (Super Fast IP), as a main non-volatile memory, has a wide range of uses in smart cards, microcontrollers and other fields. Compared with EEPORM, another non-volatile memory, flash memory has obvious advantages in area; but at the same time, the reliability of flash memory, especially the erasable number of times, is worse than EEPROM, so it is used in bank cards, ID cards, etc. Product has not yet been used. In the SST IP manufacturing process, whether the erase tip is sha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/28H01L21/8247H10B41/30
Inventor 杨鹏杨斌李铭
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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