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Manufacturing method of high voltage semiconductor device

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high manufacturing cost and complex semiconductor device manufacturing process, and achieve the effect of improving reliability and simplifying the process

Inactive Publication Date: 2008-04-30
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0020] Therefore, the manufacturing process of the semiconductor device is complicated, and the manufacturing cost is higher than desired

Method used

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  • Manufacturing method of high voltage semiconductor device
  • Manufacturing method of high voltage semiconductor device
  • Manufacturing method of high voltage semiconductor device

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Experimental program
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Embodiment Construction

[0035] Hereinafter, embodiments will be described with reference to the drawings.

[0036] Descriptions of technical contents well known to those skilled in the art and not directly related to the present application will be omitted.

[0037] 2A to 2D are cross-sectional views of a method of manufacturing a high voltage semiconductor device according to an embodiment consistent with the present invention.

[0038] First, as shown in FIG. 2A, a semiconductor substrate 100 is formed, and the semiconductor substrate 100 is defined as: a key area for forming an alignment key, a low voltage area for forming a low voltage device, and a high voltage area for forming a high voltage device .

[0039] Next, a first oxide film 110 performing a buffer function is formed on the semiconductor substrate 100 by performing a thermal oxidation process.

[0040] Next, an insulating film 120 is formed on the first oxide film 110, and at this time, the insulating film 120 may be formed of a high...

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Abstract

The present invention discloses a semiconductor device, and more particularly, a manufacturing method of a high voltage semiconductor device. The method includes: forming a semiconductor substrate having a key area for an alignment key, a low voltage area for a low voltage device, and a high voltage area for a high voltage device; forming an oxide film on the substrate; and forming an insulating film on the oxide film. After removing the insulating film, the method includes forming a plurality of shallow trench isolations (STI's) in the areas of the substrate; forming a nitride layer on the substrate and on STIs; sequentially forming a plurality of wells and drift areas by implanting an impurity ion into the high voltage area; and sequentially forming the plurality of wells and the drift areas by implanting an impurity ion into the low voltage area. A system on chip (SOC) process may thus be simplified.

Description

[0001] This application is based on and claims priority from Korean Patent Application No. 10-2006-0104778 filed on October 7, 2006, which is hereby incorporated by reference in its entirety. technical field [0002] The present invention relates to a semiconductor device, and in particular to a manufacturing method of a high-voltage semiconductor device. Background technique [0003] In general, high voltage semiconductor device fabrication processes requiring high voltages are used in various technologies such as liquid crystal displays (LCDs), driver integrated circuits, organic light emitting diodes (OLEDs), power integrated circuits, and the like. [0004] The manufacturing process of high-voltage semiconductor devices may adopt a method of integrating high-voltage devices, medium-voltage devices, and low-voltage devices in the form of a system on chip (SOC). [0005] High-voltage devices manufactured through the manufacturing process of high-voltage semiconductor devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/822H01L21/762H01L21/265
CPCH01L21/823481H01L21/76229H01L21/823493H01L21/308H01L21/31144
Inventor 崔容建
Owner DONGBU HITEK CO LTD