Semiconductor integrated circuit and manufacturing method thereof

Abstract

A semiconductor integrated circuit relating to one aspect of the present invention includes a power transistor, at least one or more of first metal patterns functioning as a first electrode of the power transistor and at least one or more of second metal patterns functioning as a second electrode of the power transistor formed in an interlayer insulation film on the transistor, at least one or more of first busses electrically connected to a corresponding first metal pattern of the at least one or more of the first metal patterns, a single second bus electrically connected to the at least one or more of second metal patterns, and a contact pad provided to each of the at least one or more of first busses and the single second bus.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit and a manufacturing method thereof, in particular to the application of POE (Pad on Element) technology, that is, the technology of setting a boss (Pad) directly above (directly above) a semiconductor device, which can be directly above an active circuit area. A power integrated circuit with a wire bonding structure and a method for manufacturing the same. Background technique [0002] In recent years, with the popularization of information technology, there has been an increasing demand for higher speed and lower power consumption of electronic devices such as computers, information storage devices, mobile phones, and portable cameras. [0003] The factors that have a greater impact on the performance of these electronic devices include the backbone semiconductor electronic components such as power supplies, motor drivers, and audio amplifiers; and the factors that have a greater impact on th...

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Problems solved by technology

[0033] In addition, when a large current flows into the power transistor, because the bus lines connected to the source electrode and the drain electrode of the power transistor are connected to a plurality of common contact bosses, there are also power transistors (such as power NPN transistors, etc.) Depending on the type of the electrode, current concentration occurs in some layouts of the bus lines connected to the electrodes, causing damage to the power transistor and thus deteriorating the reliability of the semiconductor integrated circuit.

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