Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Start circuit for mass production of reference voltage source suitable for Sub1V current mode

A technology of reference voltage source and start-up circuit, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve the problem of not meeting the application requirements of low power supply voltage, and achieve the elimination of abnormal chip work, easy implementation, and great economy. The effect of benefit and value

Inactive Publication Date: 2008-06-11
FUDAN UNIV
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional bandgap reference sources [3, 4, 5, 6] can only generate a fixed reference voltage of about 1.2V, which cannot meet the application requirements of low power supply voltage.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Start circuit for mass production of reference voltage source suitable for Sub1V current mode
  • Start circuit for mass production of reference voltage source suitable for Sub1V current mode
  • Start circuit for mass production of reference voltage source suitable for Sub1V current mode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032]The specific implementation manner of the present invention will be further described below by needing to design and realize a 0.6V voltage reference source. The specific design steps are as follows:

[0033] 1) From the perspective of starting the circuit without affecting the normal working state of the circuit, set an appropriate value of the comparison threshold voltage VC, that is, set it to 1V, so as to determine the size of the first resistor 16 .

[0034] 2) In order to reduce the power consumption of the start-up circuit as much as possible, an appropriate bias current of 10 uA is selected, and the sizes of the first PMOS transistor 11 and the fourth NMOS transistor 14 are determined.

[0035] 3) From the perspective of the start-up process time, what affects the start-up time is the magnitude of the injected current, which determines the size of the second PMOS transistor 12 , the third PMOS transistor 13 and the fifth NMOS transistor 15 .

[0036] Use the CAD...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technology field of a reference source analog integrated circuit, in particular to a starting circuit being suitable for a reference voltage source capacity with Sbu1V current mode. The circuit is composed of three PMOS pipes, two NMOS pipes and a resistance mutually connected through a circuit. A reference voltage part is composed of three PMOS pipes, an operational amplifier, three triodes and a plurality of resistances mutually connected through a circuit. The starting circuit of the invention can avoid the aftereffect of abnormal working the operational amplifier maladjustment voltage Vos brings to chips and release zero state. The starting circuit has simple structure and easy realization, and is able to be applied in traditional reference voltage source.

Description

technical field [0001] The invention belongs to the technical field of reference source analog integrated circuits, and in particular relates to a starting circuit of a reference voltage source suitable for a Sub1V current mode. technical background [0002] Bandgap reference sources are widely used in various analog integrated circuits and mixed-signal circuits due to their precise absolute value of output voltage, low temperature coefficient and good power supply rejection ratio (PSRR) [1]. As the process size shrinks, the power supply voltage for chip operation also shrinks simultaneously. STMicroelectronics (NYSE: STM), the world's leading semiconductor manufacturer, announced the company's 45nm process CMOS design platform before August 2007. On this platform, customers can provide low-power wireless and portable communications Applied Devices develops next-generation System-on-Chip SoC products. The manufacturing process has a logic circuit density of 1.6 million gat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G05F3/24
Inventor 张科李文宏刘冉
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com