Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for determining temperature distortion correcting parameter of lens array system apparatus

A system device and thermal deformation technology, which is applied in the direction of photolithographic exposure device, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problem that the thermal deformation correction parameters cannot achieve accurate compensation, make up too large or too small, and aggravate focus Point drift and other problems, to achieve the effect of correcting the parameters of the thermal deformation of the lens group system device

Inactive Publication Date: 2008-07-30
SEMICON MFG INT (SHANGHAI) CORP
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the increasing perfection of the process and the increasing precision of the process requirements, the thermal deformation correction parameters of the fixed lens group system device obviously cannot achieve accurate compensation. On the contrary, due to its inaccuracy, the compensation will be too large or too small. focus drift

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for determining temperature distortion correcting parameter of lens array system apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] The method for determining the thermal deformation correction parameter (CF) of the lens group system device of the present invention is applicable to various types of wafers in any selected process. When the selected process needs to determine the CF value, first adjust the wafer calibration selection parameter on the exposure machine, which is used for alignment of each wafer in a batch of wafers. In the embodiment of the present invention, a batch of wafers is 25 wafers.

[0011] The method of the present invention specifically includes the following steps. Firstly, different CFs are set, and the exposure machine is operated to obtain corresponding reticle magnification parameters (Reticle Magnification, R-Mag) according to the different CF settings. The mask plate magnification parameter R-Mag can characterize the degree of deformation of the lens group system device.

[0012] Then based on the obtained CF and R-Mag values ​​plotted as figure 1 As shown in the gra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for determining corrected parameters for the thermal deformation of a battery of lenses system device. The method is suitable for the exposure of a plurality of wafers. The method comprises the following steps: a. selecting different corrected parameters for thermal deformation of the battery of lenses assembly system device in a predetermined region; b. obtaining the amplification parameters of a relevant mask according to the selected different corrected parameters for thermal deformation of the battery of lenses system device; and c. selecting the corrected parameter for thermal deformation of the battery of lenses system device where the mask amplification parameters change little with the increase in quantity of the exposed wafers, and using the selected correction parameter as the optimal correction parameter for thermal deformation of the lens assembly system device. Compared with prior art, the invention can accurately select the optimal correction parameter for thermal deformation of the lens assembly system device. Additionally, the different kinds of wafers can obtain the corrected parameters for thermal deformation of the relevant battery of lenses system device during different manufacturing processes.

Description

technical field [0001] The invention relates to a wafer exposure process, in particular to a method for determining the thermal deformation correction parameters of a lens group system device. Background technique [0002] The lens group system device in the exposure machine is completely closed. If it is used for a long time, thermal expansion will occur. The focal point of the exposure will drift with the thermal deformation of the lens group system device, resulting in the offset of the optical path difference. At the same time, the alignment Offset also occurs, distorting the image on the wafer. [0003] At present, it is usually used to set the appropriate lens group system device thermal deformation correction parameters in the exposure machine to make up for the focal point drift caused by the deformation in advance. [0004] However, in the prior art, the thermal deformation correction parameter of the lens group system device is usually a fixed value obtained accor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20H01L21/027H01L21/00
Inventor 杨金坡刘伟
Owner SEMICON MFG INT (SHANGHAI) CORP