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Non-volatile memory device and erasing method thereof

A non-volatile storage and storage device technology, applied in the field of semiconductor memory, can solve the problem of increasing the total processing time

Active Publication Date: 2013-08-28
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, such operations significantly increase the total processing time

Method used

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  • Non-volatile memory device and erasing method thereof
  • Non-volatile memory device and erasing method thereof
  • Non-volatile memory device and erasing method thereof

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Embodiment Construction

[0030]The invention will now be described by way of several preferred but non-limiting inventive examples. The embodiments are presented by way of example only, and the invention is not considered to be limited to the specific structures and / or features of the exemplary embodiments. It should be understood that when an element is referred to as being "on," "connected to," or "coupled to" another element, it can be directly on the other element, "connected to," or "coupled to" another element. Other components are connected or coupled to other components or intervening components may be present. In contrast, when an element is referred to as being "directly on," "directly connected to" or "directly coupled to" another element, there are no intervening elements present.

[0031] One or more embodiments of the present invention are directed to a non-volatile semiconductor memory device configured to perform a pre-program operation and / or a post-program operation before and after...

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Abstract

In one aspect, a non-volatile NAND-flash semiconductor memory device is provided which is configured to execute at least one of a pre-program operation and a post-program operation before and after an erase operation, respectively. Each of the pre-program and post-program operations includes applying a program voltage to a subset of a plurality of word lines defining a word line block of the memory device.

Description

technical field [0001] The present invention mainly relates to semiconductor memory, and in particular, the present invention relates to a nonvolatile memory device and an erasing method of the nonvolatile memory device. Background technique [0002] figure 1 An example of a cell string structure of a conventional NAND flash memory device is illustrated in . [0003] refer to figure 1 , the first cell string 10 includes flash memory cells MC<0:31> gated to respective word lines WL<0:31>. The flash memory cells MC<0:31> are connected in series between the ground selection transistor GST and the string selection transistor SST. The ground selection transistor GST is gated to the ground selection line GSL, and the string selection transistor SST is gated to the string selection line SSL. Also, as shown, the first cell string 10 is connected between the bit line 1HB_BL and the common selection line CSL. [0004] A second cell string 20 is similarly configu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10G11C16/16
CPCG11C16/0483G11C16/08G11C16/12G11C16/14G11C16/3454
Inventor 边大锡
Owner SAMSUNG ELECTRONICS CO LTD
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